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PDF PTFB212503FL Data sheet ( Hoja de datos )
| Número de pieza | PTFB212503FL | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FETs | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PTFB212503FL (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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PTFB212503EL
PTFB212503FL
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 2110 – 2170 MHz
Description
The PTFB212503EL and PTFB212503FL are 240-watt
LDMOS FETs intended for use in multi-standard cellular power
amplifier applications in the 2110 to 2170 MHz frequency band.
Features include input and output matching, high gain, wide
signal bandwidth and reduced memory effects for unparalleled
DPD correctability. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFB212503EL
Package H-33288-6
PTFB212503FL
Package H-34288-4/2
Two-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1.85 A, ƒ = 2170 MHz,
3GPP signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
-15
-20 ACPR
IMD Low
-25 IMD Up
-30 Efficiency
40
35
30
25
-35 20
-40 15
-45 10
-50 5
-55 0
32 34 36 38 40 42 44 46 48 50
Output Power (dBm)
RF Characteristics
Features
• Broadband internal input and output matching
• Enhanced for use in DPD error correction systems
• Wide video bandwidth
• Typical single-carrier WCDMA performance at 2170 MHz,
30 V, IDQ = 1.85 A, 3GPP signal, channel bandwidth =
3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF
- Average output power = 49.4 dBm
- Linear gain = 18 dB
- Efficiency = 37%
- Intermodulation distortion = –33 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P1dB = 240 W
- Efficiency = 54 %
• Increased negative gate-source voltage range for
improved performance in Doherty peaking amplifiers
• Integrated ESD protection: Human Body Model, Class 2
(minimum)
• Capable of handling 10:1 VSWR @ 30 V, 240 W (CW)
output power
• Pb-free, RoHS-compliant
Two-carrier WCDMA Specifications (not subject to production test—verified by design/characterization in Infineon test
fixture)
VDD = 30 V, IDQ = 1.85 A, POUT = 55 W average, ƒ1 = 2160 MHz, ƒ2 = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Gps
hD
— 18.0
— 31
—
—
dB
%
Intermodulation Distortion
IMD
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
— –33 — dBc
Rev. 07.1, 2016-06-15
1 page  
Typical Performance (cont.)
CW Performance
VDD = 30 V, IDQ = 1.85 A, ƒ = 2170 MHz
21
+25 ° C
20 +85° C
–10° C
19
Efficiency
18 Gain
17
16
15
35
40 45 50
Output Power (dBm)
60
50
40
30
20
10
0
55
Single-carrier WCDMA
VDD = 30 V, IDQ = 1.85 A ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8.5 dB, BW 3.84 MHz
-20 60
-30 50
-40
-50 IM3
40
30
-60
Efficiency
20
-70 10
-80 0
33 35 37 39 41 43 45 47 49 51
Output Power (dBm)
PTFB212503EL
PTFB212503FL
CW Performance
Gain vs. Output Power
VDD = 30 V, ƒ = 2170 MHz
19
IDQ = 2.11 A
18
IDQ = 1.85 A
17 IDQ = 1.30 A
16
35
40 45 50
Output Power (dBm)
55
Single-carrier WCDMA, 3GGP Broadband
VDD = 30 V, IDQ = 1.85 A, POUT = 63 W
60
55
50
45
40 Efficiency
35
30 IM3
25
20 Gain
15
10
1960 2020 2080
2140
2200
Frequency (MHz)
0
-5
RL -10
-15
-20
-25
-30
-35
-40
-45
-50
2260 2320
Data Sheet
5 of 14
Rev. 07.1, 2016-06-15
5 Page 
Reference Circuit (cont.)
Components Information
Component
Description
Input
C101
Chip capacitor, 7.5 pF
C102
Chip capacitor, 2.4 pF
C103, C104
Chip capacitor, 10 pF
C105, C106
Chip capacitor, 4.7 µF
C801, C802, C803
Capacitor, 1000 pF
R101, R102, R803
R801
Resistor, 10 W
Resistor, 10 W
R802
R804
R805
S1
Resistor, 100 W
Resistor, 1200 W
Resistor, 1300 W
Transistor
S2 Voltage Regulator
S3 Potentiometer, 2k W
Output
C201, C202
C203
C204, C211
C205, C210
C206, C207
C208, C209
Chip capacitor, 1.2 pF
Chip capacitor, 6.2 pF
Capacitor, 10 µF
Capacitor, 10 µF
Chip capacitor, 2.2 µF
Chip capacitor, 1 µF
PTFB212503EL
PTFB212503FL
Suggested Manufacturer P/N
ATC
ATC
ATC
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
ATC100B7R5BW500XB
ATC100B2R4BW500XB
ATC100A100JW500XB
493-2372-2-ND
PCC1772CT-ND
P10ECT-ND
P10GCT-ND
P101ECT-ND
P1.2KGCT-ND
P1.3KGCT-ND
BCP56
LM78L05ACM-ND
3224W-202ECT-ND
ATC
ATC
Digi-Key
Garrett Electronics
Digi-Key
Digi-Key
ATC100A1R2BW500XB
ATC100B6R2JW500XB
587-1818-2-ND
281M5002106K
445-1447-2-ND
445-1411-2-ND
Data Sheet
11 of 14
Rev. 07.1, 2016-06-15
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PTFB212503FL.PDF ] | |
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