|
|
PDF PTFB201402FC Data sheet ( Hoja de datos )
| Número de pieza | PTFB201402FC | |
| Descripción | High Power RF LDMOS Field Effect Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PTFB201402FC (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
PTFB201402FC
High Power RF LDMOS Field Effect Transistor
140 W, 28 V, 2010 – 2025 MHz
Description
The PTFB201402FC integrates two 70 W LDMOS FETs into one
open-cavity ceramic package. It is designed primarily for Doherty cel-
lular amplifier applications in the 2010 to 2025 MHz frequency band.
Manufactured with Infineon’s advanced LDMOS process, this device
offers excellent thermal performance and superior reliability.
PTFB201402FC
Package H-37248-4
Small Signal CW
Gain & Input Return Loss, single side
VDD = 28 V, IDQ = 650 mA
21.0
20.5
20.0
19.5
19.0
18.5
18.0
17.5
17.0
16.5
16.0
1800
Gain
IRL
1900
2000
2100
Frequency (MHz)
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
2200
Features
• Broadband internal matching
• Typical CW performance, 28 V, single side
- Output power, P1dB = 70 W
- Efficiency = 56%
• Integrated ESD protection
• Excellent thermal stability
• Capable of handling 10:1 VSWR @ 28 V, 70 W
(CW) output power, per side
• Pb-free and RoHS-compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
VDD = 28 V, IDQ (main) = 500 mA, VGSPK = 42.6% x VGS1, ƒ1 = 1880 MHz, ƒ2 = 2025 MHz, POUT = 20 W, PAR = 10 dB @
0.01% CCDF probability
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Gps
hD
15 16 — dB
34 36
—
%
Adjacent Channel Power Ratio
ACPR
— –38.5 –33
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
Rev. 03.1, 2016-06-14
1 page  
db201602ef Dec. 3, 2009 4:50:38 PM
ptfb201602ef
Broadband Circuit Impedance Nornalized to 50 Ohms
Z Source
D
Z Load
PTFB201402FC
Z0 = 50 Ω
G
S
Z Source
2025 MHz
2010 MHz
Frequency
MHz
2010
2025
Z Source W
R jX
15.4
3.8
15.5
4.1
Z Load W
R jX
3.9 –4.4
3.9 –4.4
See next page for reference circuit information
Z Load
2025 MHz
0.1
2010 MHz
0. 2
0.3
0.4
Data Sheet
5 of 14
Rev. 03.1, 2016-06-14
5 Page 
PTFB201402FC
Reference Circuit (cont.)
Circuit Assembly Information
Test Fixture Part No.
LTD/PTFB201402FC
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
RO4350, .020 (61) C109 C108
R107
R106
S3 S2
R104
C107
R105
S1
C101
R108
R111
C102
C103
R103
C106
R101
RF_IN
U1
R109
S4
C105
R102
R110
C110
C104
PTFB201402_IN_02
Reference circuit assembly diagram (not to scale)
VDD
C220
C209
C219
C218
C217
C204
C206
C205
C221
C208
C210
C202
C207
C211
C203
C201
C212
C213
C214
C215
C216
VDD
RO4350, .020
(62)
RF_OUT
PTFB201402_OUT_01
b201402ef_CD_02-03-2011
Data Sheet
11 of 14
Rev. 03.1, 2016-06-14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PTFB201402FC.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PTFB201402FC | High Power RF LDMOS Field Effect Transistor | Infineon |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |