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PTFB211803FL の電気的特性と機能

PTFB211803FLのメーカーはInfineonです、この部品の機能は「Thermally-Enhanced High Power RF LDMOS FETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 PTFB211803FL
部品説明 Thermally-Enhanced High Power RF LDMOS FETs
メーカ Infineon
ロゴ Infineon ロゴ 




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PTFB211803FL Datasheet, PTFB211803FL PDF,ピン配置, 機能
PTFB211803EL
PTFB211803FL
Thermally-Enhanced High Power RF LDMOS FETs
180 W, 2110 – 2170 MHz
Description
The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs
intended for use in multi-standard cellular power amplifier applications
in the 2110 to 2170 MHz frequency band. Features include input and
output matching, high gain and thermally-enhanced packages with
slotted or earless flanges. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal perform-
ance and superior reliability.
PTFB211803EL
H-33288-6
PTFB211803FL
H-34288-4/2
Two-carrier WCDMA 3GPP Drive-up
VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
-20 40
-25 35
-30
Efficiency
30
-35 25
-40 IMD Up
20
-45 ACPR 15
-50 10
IMD Low
-55 5
-60 0
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at
2170 MHz, 30 V
- Average output power = 40 W
- Linear Gain = 17.5 dB
- Efficiency = 29.7%
- Intermodulation distortion = –34 dBc
- Adjacent channel power = –37 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P1dB = 180 W
- Efficiency = 55%
• Increased negative gate-source voltage range for
improved performance in Doherty amplifiers
• Integrated ESD protection.
• Capable of handling 10:1 VSWR @ 30 V,
180 W (CW) output power
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test–verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.3 A, POUT = 40 W average, ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Gps
hD
— 17.5
— 29.5
dB
%
Adjacent Channel Power Ratio
ACPR
— –38
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
Rev. 05.1, 2016-06-15

1 Page





PTFB211803FL pdf, ピン配列
Typical Performance (data taken in a production test fixture)
PTFB211803EL
PTFB211803FL
Two-carrier WCDMA 3GPP
VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
19 40
18
Gain
17
30
20
16 10
Efficiency
15 0
33 35 37 39 41 43 45 47 49
Output Power (dBm)
Single-carrier WCDMA Drive-Up
VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz
3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz
-20 40
-25
Efficiency
35
-30 30
-35 25
-40 ACP Low
-45
20
15
-50 10
ACP Up
-55 5
-60 0
33 35 37 39 41 43 45 47 49
Output Power (dBm)
Single-carrier WCDMA, 3GPP Broadband
VDD = 30 V, IDQ = 1.30 A, POUT = 47 dBm
50 -10
40 IRL -20
30 -30
Efficiency
20
ACP
-40
10
2080
2100
Gain
2120 2140 2160
Frequency (MHz)
2180
-50
2200
CW Performance
Gain vs. Output Power
VDD = 30 V, ƒ = 2170 MHz
IDQ = 1.80 A
18
17
IDQ = 1.30 A
IDQ = 0.90 A
16
15
41 43 45 47 49 51 53
Output Power (dBm)
Data Sheet
3 of 14
Rev. 05.1, 2016-06-15


3Pages


PTFB211803FL 電子部品, 半導体
nalized to 50 Ohms
MHz
2080 MHz
PTFB211803EL
PTFB211803FL
Broadband Circuit Impedance
Z Source
D
Z Load
Z0 = 50
G
S
Frequency
MHz
2200
2170
2140
2110
2080
Z Source W
R jX
2.02
–6.03
2.12
–6.26
2.23
–6.50
2.34
–6.75
2.47
–7.01
Z Load W
R jX
1.70
–4.67
1.72
–4.76
1.73
–4.85
1.75
–4.95
1.77
–5.05
See next page for reference circuit information
Z Load
0.1
2200 MHz
2080 MHz
Z Source
0. 2
0.3
0.4
Data Sheet
6 of 14
Rev. 05.1, 2016-06-15

6 Page



ページ 合計 : 14 ページ
 
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共有リンク

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部品番号部品説明メーカ
PTFB211803FL

Thermally-Enhanced High Power RF LDMOS FETs

Infineon
Infineon


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