|
|
PDF PTFB211503FL Data sheet ( Hoja de datos )
| Número de pieza | PTFB211503FL | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FETs | |
| Fabricantes | Infineon | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PTFB211503FL (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
PTFB211503EL
PTFB211503FL
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 2110 – 2170 MHz
Description
The PTFB211503EL and PTFB211503FL are thermally-enhanced,
150-watt, LDMOS FETs designed for cellular power amplifier
applications in the 2110 to 2170 frequency band. Features
include I/O matching, high gain, and thermally-enhanced ceramic
open-cavity packages with slotted and earless flanges.Manufactured with
Infineon's advanced LDMOS process, these devices provide excellent
thermal performance and superior reliability.
PTFB211503EL
H-33288-6
PTFB211503FL
H-34288-4/2
Two-carrier WCDMA 3GPP Drive-up
VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
-20 40
-25 35
-30 30
Efficiency
-35 25
-40 20
-45
IMD Up
ACPR 15
-50
IMD Low
10
-55 5
-60 0
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
Features
• Broadband internal matching
• Enhanced for use in DPD error correction systems
• Typical two-carrier WCDMA performance at 2170
MHz, 30 V
- Average output power = 32 W
- Linear Gain = 18 dB
- Efficiency = 29%
- Intermodulation distortion = –34 dBc
- Adjacent channel power = –37 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P1dB = 150 W
- Efficiency = 55%
• Increased negative gate-source voltage range
for improved performance in Doherty peaking
amplifiers
• Integrated ESD protection
• Capable of handling 10:1 VSWR @ 30 V, 150 W
(CW) output power
• Pb-Free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.2 A, POUT = 32 W AVG, ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Gps
hD
— 18 — dB
— 29
—
%
Adjacent Channel Power Ratio
ACPR — –36 — dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
Rev. 04.1, 2016-06-14
1 page  
Typical Performance (cont.)
CW Performance
Gain vs. Output Power
VDD = 30 V, ƒ = 2170 MHz
IDQ = 1.40 A
18
17
IDQ = 1.20 A
IDQ = 0.80 A
16
15
41 43 45 47 49 51 53
Output Power (dBm)
-20
-30
-40
-50
-60
-70
40
Intermodulation Distortion
vs. Output Power
VDD = 30 V, IDQ = 1.20 A,
ƒ1 = 2170 MHz, ƒ2 = 2169 MHz
3rd Order
5th
7th
45 50
Output Power, PEP (dBm)
55
PTFB211503EL
PTFB211503FL
Power Sweep, CW
Gain & Efficiency vs. Output Power
VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz
19 60
18 50
17
16
15
14
42
Gain
Efficiency
+25º C
+85º C
–10º C
44 46 48 50
Output Power (dBm)
40
30
20
10
52
Data Sheet
5 of 14
Rev. 04.1, 2016-06-14
5 Page 
Reference Circuit (cont.)
Component Information
Component
Description
Input
C101, C102
Chip capacitor, 10 pF
C103, C104
Chip capacitor, 4.71 μF
C105
Chip capacitor, 0.6 pF
C106
Chip capacitor, 2.2 pF
C107
Chip capacitor, 8.2 pF
C801, C802, C803
Capacitor, 1000 pF
R101, R104, R803, R805 Resistor, 10 W
R801
R802
R804
S1
Resistor, 1200 W
Resistor, 1300 W
Resistor, 100 W
Voltage Regulator
S2 Transistor
S3 Potentiometer, 2k W
Output
C201, C206
C202, C210
C203, C209
C204, C205
C207
C208
Chip capacitor, 1 μF
Chip capacitor, 2.2 μF
Capacitor, 10 μF
Capacitor, 10 μF
Chip capacitor, 8.2 pF
Chip capacitor, 0.5 pF
PTFB211503EL
PTFB211503FL
Suggested Manufacturer P/N
ATC
Digi-Key
ATC
ATC
ATC
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
ATC100A100FW150XB
493-2372-2-ND
ATC100B0R6BW500XB
ATC100B2R2BW500XB
ATC100B8R2BW500XB
PCC1772CT-ND
P10ECT-ND
P1.2KGCT-ND
P1.3KGCT-ND
P100ECT-ND
LM78L05ACM-LD
BCP5616TA-ND
3224W-202ECT-ND
Digi-Key
Digi-Key
Digi-Key
Digi-Key
ATC
ATC
445-1411-2-ND
445-1447-2-ND
281M5002106K
587-1818-2-ND
ATC100B8R2BW500XB
ATC100B0R5BW500XB
Data Sheet
11 of 14
Rev. 04.1, 2016-06-14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PTFB211503FL.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PTFB211503FL | Thermally-Enhanced High Power RF LDMOS FETs | Infineon |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |