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PTFB191501F の電気的特性と機能

PTFB191501FのメーカーはInfineon Technologiesです、この部品の機能は「Thermally-Enhanced High Power RF LDMOS FETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 PTFB191501F
部品説明 Thermally-Enhanced High Power RF LDMOS FETs
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 




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PTFB191501F Datasheet, PTFB191501F PDF,ピン配置, 機能
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 1930 – 1990 MHz
Description
The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs
designed for single- and two-carrier WCDMA and CDMA applications
from 1930 to 1990 MHz. Features include input and output matching,
and thermally-enhanced, RoHs-compliant package with slotted and
earless flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFB191501E
Package H-36248-2
PTFB191501F
Package H-37248-2
PTFB191501E
PTFB191501F
Two-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1.20 A, ƒ = 1990 MHz, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
-20 40
-25
Efficiency
35
-30
IMD Up
30
-35 25
-40 20
-45 15
IMD Low
-50 10
-55
ACPR
5
-60 0
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
RF Characteristics
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at
1990 MHz, 30 V
- Average output power = 35 W
- Linear gain = 18 dB
- Efficiency = 30%
- Intermodulation distortion = –35 dBc
• Typical CW performance, 1990 MHz, 30 V
- Output power at P–1dB = 150 W
- Efficiency = 55%
• Increased negative gate-source voltage range for
improved performance in Doherty peaking
amplifiers
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V, 150 W
(CW) output power
• Pb-free, RoHS-compliant
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.2 A, POUT = 35 W average, ƒ1 = 1985 MHz, ƒ2 = 1995 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
Gps — 18
ηD — 30
IMD — –35
Max
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 15
Rev. 03, 2015-01-14

1 Page





PTFB191501F pdf, ピン配列
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
PTFB191501E
PTFB191501F
Two-carrier WCDMA 3GPP Drive-up
VDD = 30 V, IDQ = 1.20 A, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
-25
1990 MHz Low
-30 1990 MHz Up
1960 MHz Low
-35 1960 MHz Up
1930 MHz Low
-40 1930 MHz Up
-45
-50
-55
-60
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
Two-carrier WCDMA 3GPP
VDD = 30 V, IDQ = 1.20 A, ƒ = 1990 MHz, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
20 50
19
Gain
18
40
30
17 20
Efficiency
16 10
15 0
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
CW Power Sweep
Gain & Efficiency vs. Output Power
VDD = 30 V, IDQ = 1.20 A, ƒ = 1990 MHz
20
19
18
17
16
15
14
41
Gain
Efficiency
43 45 47 49 51
Output Power (dBm)
65
55
45
35
25
15
5
53
Two-tone Broadband Performance
VDD = 30 V, IDQ = 1.20 A, POUT = 63 W
60 -5
55 IRL -10
50 -15
45
Efficiency
-20
40 -25
35
IMD3
-30
30 -35
25 -40
20
Gain
-45
15 -50
1890 1910 1930 1950 1970 1990 2010 2030
Frequency (MHz)
Data Sheet
3 of 15
Rev. 03, 2015-01-14


3Pages


PTFB191501F 電子部品, 半導体

6 Page



ページ 合計 : 15 ページ
 
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共有リンク

Link :


部品番号部品説明メーカ
PTFB191501E

Thermally-Enhanced High Power RF LDMOS FETs

Infineon Technologies
Infineon Technologies
PTFB191501F

Thermally-Enhanced High Power RF LDMOS FETs

Infineon Technologies
Infineon Technologies


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