PTFB183404F Datasheet PDF - Infineon
| Part Number | PTFB183404F | |
| Description | High Power RF LDMOS Field Effect Transistors | |
| Manufacturers | Infineon | |
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PTFB183404E
PTFB183404F
High Power RF LDMOS Field Effect Transistors
340 W, 1805 – 1880 MHz
Description
The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs
intended for use in multi-standard cellular power amplifier applications
in the 1805 to 1880 MHz frequency band. Features include input and
output matching, high gain and thermally-enhanced package with
slotted and earless flanges. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal performance
and superior reliability.
PTFB183404E
Package H-36275-8
PTFB183404F
Package H-37275-6/2
Two-carrier WCDMA 3GPP Drive-up
VDD = 30 V, IDQ = 2.6A, ƒ = 1880 MHz, 3GPP
WCDMA, PAR = 8:1, 10 MHz carrier spacing,
BW = 3.84 MHz
-25 35
-30 30
-35
IMD Low
-40 IMD Up
25
20
-45 15
-50
-55
-60
36
ACPR
Efficiency
38 40 42 44 46 48 50
Average Output Power (dBm)
10
5
0
52
Features
• Broadband internal input and output matching
• Wide video bandwidth
• Typical single-carrier WCDMA performance,
1880 MHz, 30 V
- Output power = 125 W
- Efficiency = 31%
- Gain = 17 dB
- PAR = 5.5 dB @ 0.01% CCDF probability
- ACPR @ 5 MHz = –37 dBc
• Increased negative gate-source voltage range for
improved performance in Doherty amplifiers
• Capable of handling 10:1 VSWR @ 30 V, 340 W
(CW) output power
• Integrated ESD protection
• Excellent thermal stability
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 2.6 A, POUT = 80 W average, ƒ1 = 1870 MHz, ƒ2 = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Gps
hD
IMD
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 18
Min
16
24
—
Typ
17
25.5
–35
Max
—
—
–32
Unit
dB
%
dBc
Rev. 04.1, 2016-06-10
|
| |
 
Typical Performance (cont.)
Two-tone Drive-up at
Selected Frequencies
VDD = 30 V, IDQ = 2.6 A, tone spacing = 1 MHz
-20
1880MHz
1842.5MHz
-30 1805MHz
-40
-50
-60
39 41 43 45 47 49 51 53 55 57
Output Power, PEP (dBm)
Intermodulation Distortion
vs. Tone Spacing
ƒ = 1842.5 MHz, POUT = 330 W (PEP),
VDD = 30 V, IDQ = 2.6 A
-10
-15 IMD Lower
-20 IMD Upper
-25
-30
-35 IMD3
-40
-45 IMD5
-50
-55 IMD7
-60
1 10
Two Tone Spacing (MHz)
100
PTFB183404E
PTFB183404F
Intermodulation Distortion
vs. Output Power
VDD = 30 V, IDQ = 2.6 A,
ƒ1 = 1880 MHz, ƒ2 = 1879 MHz
-20
3rd Order
-30
-40 5th
-50 7th
-60
-70
39 41 43 45 47 49 51 53 55 57
Output Power, PEP (dBm)
Single-carrier Drive-up, 1880 MHz
VDD = 30 V, IDQ = 2.6 A, ƒ = 1880 MHz,
3GPP WCDMA signal, PAR = 7.5:1,
BW = 3.84 MHz
-25 35
-30 30
-35
Efficiency
25
-40 20
-45 15
-50 ACP Low 10
-55
ACP Up
5
-60 0
36 38 40 42 44 46 48 50 52 54
Average Output Power (dBm)
Data Sheet
5 of 18
Rev. 04.1, 2016-06-10
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for PTFB183404F electronic component. |
| Information | Total 18 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ PTFB183404F.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| PTFB183404E | The function is High Power RF LDMOS Field Effect Transistors. Infineon | |
| PTFB183404F | The function is High Power RF LDMOS Field Effect Transistors. Infineon | |
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