PDF PTFB183404E Data sheet ( Hoja de datos )

Número de pieza	PTFB183404E
Descripción	High Power RF LDMOS Field Effect Transistors
Fabricantes	Infineon
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No Preview Available ! PTFB183404E PTFB183404F High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB183404E Package H-36275-8 PTFB183404F Package H-37275-6/2 Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6A, ƒ = 1880 MHz, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, BW = 3.84 MHz -25 35 -30 30 -35 IMD Low -40 IMD Up 25 20 -45 15 -50 -55 -60 36 ACPR Efficiency 38 40 42 44 46 48 50 Average Output Power (dBm) 10 5 0 52 Features • Broadband internal input and output matching • Wide video bandwidth • Typical single-carrier WCDMA performance, 1880 MHz, 30 V - Output power = 125 W - Efficiency = 31% - Gain = 17 dB - PAR = 5.5 dB @ 0.01% CCDF probability - ACPR @ 5 MHz = –37 dBc • Increased negative gate-source voltage range for improved performance in Doherty amplifiers • Capable of handling 10:1 VSWR @ 30 V, 340 W (CW) output power • Integrated ESD protection • Excellent thermal stability • Pb-free and RoHS compliant RF Characteristics Two-carrier WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 2.6 A, POUT = 80 W average, ƒ1 = 1870 MHz, ƒ2 = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Gps hD IMD All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 18 Min 16 24 — Typ 17 25.5 –35 Max — — –32 Unit dB % dBc Rev. 04.1, 2016-06-10 1 page Typical Performance (cont.) Two-tone Drive-up at Selected Frequencies VDD = 30 V, IDQ = 2.6 A, tone spacing = 1 MHz -20 1880MHz 1842.5MHz -30 1805MHz -40 -50 -60 39 41 43 45 47 49 51 53 55 57 Output Power, PEP (dBm) Intermodulation Distortion vs. Tone Spacing ƒ = 1842.5 MHz, POUT = 330 W (PEP), VDD = 30 V, IDQ = 2.6 A -10 -15 IMD Lower -20 IMD Upper -25 -30 -35 IMD3 -40 -45 IMD5 -50 -55 IMD7 -60 1 10 Two Tone Spacing (MHz) 100 PTFB183404E PTFB183404F Intermodulation Distortion vs. Output Power VDD = 30 V, IDQ = 2.6 A, ƒ1 = 1880 MHz, ƒ2 = 1879 MHz -20 3rd Order -30 -40 5th -50 7th -60 -70 39 41 43 45 47 49 51 53 55 57 Output Power, PEP (dBm) Single-carrier Drive-up, 1880 MHz VDD = 30 V, IDQ = 2.6 A, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz -25 35 -30 30 -35 Efficiency 25 -40 20 -45 15 -50 ACP Low 10 -55 ACP Up 5 -60 0 36 38 40 42 44 46 48 50 52 54 Average Output Power (dBm) Data Sheet 5 of 18 Rev. 04.1, 2016-06-10 5 Page PTFB183404E PTFB183404F Reference Circuit (cont.) Electrical Characteristics at 1880 MHz Transmission Electrical Line Characteristics Input TL148 TL149 TL150 TL151 TL152 TL153 0.008 λ, 28.85 Ω TL154, TL155 0.006 λ, 17.20 Ω TL158 0.015 λ, 63.89 Ω TL160 0.004 λ, 63.89 Ω TL161 0.023 λ, 28.85 Ω TL162, TL165 0.011 λ, 8.03 Ω TL163, TL164 0.016 λ, 63.89 Ω TL166, TL167 0.021 λ, 54.17 Ω TL169, TL171 0.009 λ, 8.03 Ω Dimensions: mm Dimensions: mils W1 = 0.005, W2 = 0.011, Offset = –0.003 W1 = 0.003, W2 = 0.005, Offset = 0.000 W1 = 2.032, W2 = 0.762 W1 = 2.540, W2 = 0.762 W1 = 1.168, W2 = 2.159 W = 2.540, L = 0.762 W = 4.826, L = 0.508 W = 0.762, L = 1.422 W = 0.762, L = 0.404 W1 = 2.540, W2 = 2.540, W3 = 2.159 W1 = 11.430, W2 = 11.430, W3 = 1.016 W1 = 0.762, W2 = 0.762, W3 = 1.524 W1 = 1.016, W2 = 1.016, W3 = 2.032 W1 = 11.430, W2 = 11.430, W3 = 0.762 W1 = 5, W2 = 450, Offset = –130 W1 = 3, W2 = 190, Offset = –10 W1 = 80, W2 = 30 W1 = 100, W2 = 30 W1 = 46, W2 = 85 W = 100, L = 30 W = 190, L = 20 W = 30, L = 56 W = 30, L = 16 W1 = 100, W2 = 100, W3 = 85 W1 = 450, W2 = 450, W3 = 40 W1 = 30, W2 = 30, W3 = 60 W1 = 40, W2 = 40, W3 = 80 W1 = 450, W2 = 450, W3 = 30 See next page for more reference circuit information Data Sheet 11 of 18 Rev. 04.1, 2016-06-10 11 Page

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