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MTC5806AQ8 の電気的特性と機能

MTC5806AQ8のメーカーはCystech Electonicsです、この部品の機能は「N- AND P-Channel Logic Level Enhancement Mode MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 MTC5806AQ8
部品説明 N- AND P-Channel Logic Level Enhancement Mode MOSFET
メーカ Cystech Electonics
ロゴ Cystech Electonics ロゴ 




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MTC5806AQ8 Datasheet, MTC5806AQ8 PDF,ピン配置, 機能
CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 1/12
N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTC5806AQ8 BVDSS
N-CH
60V
ID 4.5A
RDSON(typ.) @VGS=(-)10V 37mΩ
RDSON(typ.) @VGS=(-)4.5V 42mΩ
P-CH
-60V
-3.5A
70mΩ
93mΩ
Description
The MTC5806AQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free package
Equivalent Circuit
MTC5806AQ8
Outline
SOP-8
GGate
SSource
DDrain
MTC5806AQ8
CYStek Product Specification

1 Page





MTC5806AQ8 pdf, ピン配列
*Qg
*Qgs
*Qgd
-
-
-
Source-Drain Diode
*VSD
-
*IS -
*ISM
-
CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 3/12
14 16
3.9 - nC VDS=30V, ID=4.5A, VGS=10V
4.7 -
0.75 1.0
- 1.3
- 2.6
V VGS=0V, IS=1.3A
A
A
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
-60
-1.0
-
-
-
-
-
-
- - V VGS=0, ID=-250μA
-1.8 -2.5
V VDS=VGS, ID=-250μA
-
±100
nA VGS=±20V, VDS=0
-
-
-1
-10
μA
VDS=-48V, VGS=0
VDS=-40V, VGS=0, Tj=55°C
70
93
90
125
mΩ
VGS=-10V, ID=-3.5A
VGS=-4.5V, ID=-3A
5 - S VDS=-10V, ID=-3.5A
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
-
-
-
-
-
-
-
-
-
-
Source-Drain Diode
*VSD
-
*IS -
*ISM
-
940
49
35
6
8
26
11
10
3
3.1
-0.75
-
-
-
-
-
13
18
31
20
15
-
-
-1.0
-1.3
-2.6
pF VDS=-30V, VGS=0, f=1MHz
ns
ns VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω
nC VDS=-30V, ID=-3.5A, VGS=-10V
V VGS=0V, IS=-1.3A
A
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Ordering Information
Device
MTC5806AQ8
Package
Shipping
Marking
SOP-8
(Pb-free lead plating & halogen-free package)
2500 pcs / Tape & Reel
5806SS
MTC5806AQ8
CYStek Product Specification


3Pages


MTC5806AQ8 電子部品, 半導体
CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 6/12
Typical Characteristics(Cont.) : Q1( N-channel)
Typical Transfer Characteristics
40
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
50
35 VDS=10V
30
25
40 TJ(MAX)=150°C
TA=25°C
θJA=78°C/W
30
20
20
15
10 10
5
0
0 2 4 6 8 10 12
VGS, Gate-Source Voltage(V)
0
0.001
0.01
0.1 1
Pulse Width(s)
10 100
1
D=0.5
Transient Thermal Response Curves
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=78°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
MTC5806AQ8
CYStek Product Specification

6 Page



ページ 合計 : 12 ページ
 
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部品番号部品説明メーカ
MTC5806AQ8

N- AND P-Channel Logic Level Enhancement Mode MOSFET

Cystech Electonics
Cystech Electonics


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