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PDF MTB60A06DH8 Data sheet ( Hoja de datos )
| Número de pieza | MTB60A06DH8 | |
| Descripción | Dual N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB60A06DH8 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C708H8
Issued Date : 2016.05.23
Revised Date : 2016.11.07
Page No. : 1/ 10
Dual N-Channel Enhancement Mode Power MOSFET
MTB60A06DH8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
ID@VGS=10V, TA=25°C
Features
• Low On Resistance
ID@VGS=10V, TA=70°C
RDS(ON)@VGS=10V, ID=5A
• Simple Drive Requirement
RDS(ON)@VGS=4.5V, ID=5A
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
60V
15A
9.5A
4.5A
3.6A
34mΩ(typ)
38mΩ(typ)
Equivalent Circuit
MTB60A06DH8
Outline
Pin 1
DFN5×6
Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device
MTB60A06DH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB60A06DH8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C708H8
Issued Date : 2016.05.23
Revised Date : 2016.11.07
Page No. : 5/ 10
Typical Characteristics
Typical Output Characteristics
30
10V, 9V, 8V,7V,6V,5V
25
20 VGS=4V
VGS=3.5V
15
10
VGS=2.5V
VGS=3V
5
0
0 2 4 6 8 10
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
100
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6 ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=4.5V
VGS=10V
1 Tj=25°C
0.8
0.6 Tj=150°C
0.4
10
0.01
0.1 1 10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
450
400 ID=5A
350
300
250
200
150
100
50
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
0.2
0
4 8 12 16
IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
2.5
VGS=10V, ID=5A
2
1.5
1
0.5
RDS(ON)@Tj=25°C : 34mΩ typ
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB60A06DH8
CYStek Product Specification
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MTB60A06DH8.PDF ] | |
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