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MTA50P01SN3のメーカーはCystech Electonicsです、この部品の機能は「-14V P-Channel Enhancement Mode MOSFET」です。 |
部品番号 | MTA50P01SN3 |
| |
部品説明 | -14V P-Channel Enhancement Mode MOSFET | ||
メーカ | Cystech Electonics | ||
ロゴ | |||
このページの下部にプレビューとMTA50P01SN3ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
CYStech Electronics Corp.
Spec. No. : C101N3
Issued Date : 2015.09.09
Revised Date : 2016.10.11
Page No. : 1/9
-14V P-Channel Enhancement Mode MOSFET
MTA50P01SN3
Features
• Low gate charge
• Compact and low profile SOT-23 package
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Pb-free lead plating package
BVDSS
ID @ VGS=-10V, TA=25°C
RDSON@VGS=-4.5V, ID=-3.6A
RDSON@VGS=-2.5V, ID=-3.2A
-14V
-4.3A
42.3mΩ(typ)
62.9mΩ(typ)
Symbol
MTA50P01SN3
Outline
SOT-23
D
G:Gate
S:Source
D:Drain
S
G
Ordering Information
Device
MTA50P01SN3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTA50P01SN3
CYStek Product Specification
1 Page Qg
Qgs
Qgd
Source-Drain Diode
*VSD
Trr
Qrr
-
-
-
-
-
-
CYStech Electronics Corp.
Spec. No. : C101N3
Issued Date : 2015.09.09
Revised Date : 2016.10.11
Page No. : 3/9
7.7 -
1 - nC VDS=-10V, ID=-2A, VGS=-4.5V
2.7 -
-0.9 -1.2
28 -
8-
V VGS=0V, IS=-3.4A
ns
nC
VGS=0V, IF=-2A, dIF/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Recommended Soldering Footprint
MTA50P01SN3
CYStek Product Specification
3Pages CYStech Electronics Corp.
Spec. No. : C101N3
Issued Date : 2015.09.09
Revised Date : 2016.10.11
Page No. : 6/9
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
10
1
0.1
0.01
0.001
VDS=-10V
Pulsed
Ta=25°C
0.01 0.1
1
-ID, Drain Current(A)
10
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Power Derating Curve
Mounted on FR-4 board
with 1 in² pad area
20 40 60 80 100 120 140 160
TA, Ambient Temperature(℃)
1
D=0.5
Transient Thermal Response Curves
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=90°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTA50P01SN3
CYStek Product Specification
6 Page | |||
ページ | 合計 : 9 ページ | ||
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PDF ダウンロード | [ MTA50P01SN3 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
MTA50P01SN3 | -14V P-Channel Enhancement Mode MOSFET | Cystech Electonics |