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PDF MBRF10L60CT Data sheet ( Hoja de datos )
| Número de pieza | MBRF10L60CT | |
| Descripción | Schottky Barrier Rectifier ( Diode ) | |
| Fabricantes | Inchange Semiconductor | |
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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBRF10L60CT
FEATURES
·Schottky barrier chip
·Low Power Loss,High Efficiency
·Guard ring for transient protection
·High Operating Junction Temperature
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For use in high frequency rectifier of switching mode
power supplies,freewheeling diodes,DC-to-DC converters
or polarity protection application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRMS
VR
IF(AV)
Peak Repetitive Reverse Voltage
RMS Voltage
DC Blocking Voltage
Average Rectified Forward Current
60 V
10 A
Nonrepetitive Peak Surge Current
IFSM 8.3ms single half sine-wave superimposed on 200
rated load conditions
A
TJ Junction Temperature
-55~150 ℃
Tstg Storage Temperature Range
-65~175 ℃
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBRF10L60CT.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MBRF10L60CT | Schottky Barrier Rectifier ( Diode ) | Inchange Semiconductor |
| MBRF10L60CT | Power Rectifier |  ON Semiconductor |
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