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2N3713 PDF Data sheet ( 特性 )

部品番号 2N3713
部品説明 Silicon NPN Power Transistor
メーカ Inchange Semiconductor
ロゴ Inchange Semiconductor ロゴ 



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2N3713 Datasheet, 2N3713 PDF,ピン配置, 機能
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N3713
DESCRIPTION
·Excellent Safe Operating Area
·Low Collector-Emitter Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for medium-speed switching and
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80 V
VCEO
Collector-Emitter Voltage
60 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
10 A
PC Collector Power Dissipation@TC=25150
W
TJ Junction Temperature
-65~200
Tstg Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.17 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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