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3DD100 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 3DD100
部品説明 NPN Silicon Low Frequency High Power Transistor
メーカ Shaanxi Qunli Electric
ロゴ Shaanxi Qunli Electric ロゴ 



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3DD100 Datasheet, 3DD100 PDF,ピン配置, 機能
Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DD100, 3DD101, 3DD102
NPN Silicon Low Frequency High Power Transistor
Features:
1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity.
2. Good temperature stability.Excellent thermal fatigue capability.
3. Implementation of standards: GJB33 A-97 for all, QZJ840611A, QZJ840611 for 3DD100 and 3DD101.
4. Use for Low-speed switch,low frequency power amplify,power adjustment.
5. Quality Class: JP for all, JT, JCT, GS, G, G+ for 3DD100 and 3DD101.
TECHNICAL DATA:
Parameter name
Symbols Unit
Collector-Emitter Voltage VCEO V
Collector-Emitter
Breakdown Voltage
V(BR)CEO V
Emitter-Base Voltage
Max. Collector Current
VEBO
ICM
V
A
Max. Collector Dissipation
Junction Temperature
Storage Temperature
PCM
Tjm
Tstg
W
°C
°C
Collector-Emitter Leakage
ICEO mA
Current
Collector- Emitter
VCE(sat) V
Saturation Voltage Drop
DC Current Gain
hFE
E-Base Breakdown Voltage V(BR)EBO V
3DD100
AB
100 150
100 150
3DD100: IC=1mA
4
1.5
20 (Tc75°C)
0.2 (VCE=50V)
1.0
(IC=1A,IB=0.1A)
Max.:120,Min.:20
(VCE=5V,IC=0.5A)
4 (IE=1mA)
(Ta = 25°C )
Specifications
3DD101
3DD102
CD E
200 250 300
200 250 300
3DD101: IC=1mA
3DD102: IC=1mA
44
5
50 (Tc75°C)
5
175
-55~+175
1.0 (VCE=50V)
A~C: 0.8, D~E: 1.5
(IC=2.5A,IB=0.25A)
Max.:120, Min.:20
(VCE=5V,IC=2A)
4 (IE=1mA)
hFE Colored:
Color
hFE
Brown
20~40
Red
40~80
Orange
80~120
Outline and Dimensions:
Contact:Jiandong Lei
Tel.:+86-917-6293906
Fax:+86-917-6297928
sxqlljd@hotmail.com 28

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