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3DD102 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 3DD102
部品説明 Silicon NPN Power Transistor
メーカ Inchange Semiconductor
ロゴ Inchange Semiconductor ロゴ 

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3DD102 Datasheet, 3DD102 PDF,ピン配置, 機能
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD102
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.)
·DC Current Gain-
: hFE= 20(Min.)@IC= 2A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max)@ IC= 2.5A
APPLICATIONS
·Designed for power amplifier , DC Transform T-Shirt
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
5A
PC Collector Power Dissipation@TC=7550
W
TJ Junction Temperature
150
Tstg Storage Temperature
-55~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.0 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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