DataSheet.jp

3DD102C PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 3DD102C
部品説明 Silicon NPN Power Transistor
メーカ Inchange Semiconductor
ロゴ Inchange Semiconductor ロゴ 



Total 2 pages
		

No Preview Available !

3DD102C Datasheet, 3DD102C PDF,ピン配置, 機能
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD102C
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.)
·DC Current Gain-
: hFE= 20(Min.)@IC= 2A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 2.5A
APPLICATIONS
·Designed for power amplifier , DC Transform T-Shirt
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
250 V
VCEO
Collector-Emitter Voltage
200 V
VEBO
Emitter-Base Voltage
4V
IC Collector Current-Continuous
5A
PC Collector Power Dissipation@TC=7550
W
TJ Junction Temperature
150
Tstg Storage Temperature
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.0 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

1 Page





ページ 合計 : 2 ページ
PDF
ダウンロード
[ 3DD102C.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
3DD102

NPN Silicon Low Frequency High Power Transistor

Shaanxi Qunli Electric
Shaanxi Qunli Electric
3DD102

Silicon NPN Power Transistor

Inchange Semiconductor
Inchange Semiconductor
3DD102

(3DD101 / 3DD102) NPN

ETC
ETC
3DD102A

Silicon NPN Power Transistor

Inchange Semiconductor
Inchange Semiconductor

www.DataSheet.jp    |   2019   |  メール    |   最新    |   Sitemap