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3DG13007 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 3DG13007
部品説明 Silicon NPN Power Transistor
メーカ Inchange Semiconductor
ロゴ Inchange Semiconductor ロゴ 



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3DG13007 Datasheet, 3DG13007 PDF,ピン配置, 機能
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
·Collector Saturation Voltage
: VCE(sat) = 2.0(Max) @ IC= 5.0A
·Switching Time
: tf= 0.9μs(Max.)@ IC= 5.0A
APPLICATIONS
·Designed for use in high-voltage, high-speed, power swit-
ching in inductive circuit, they are particularly suited for
115 and 220V switchmode applications such as switching
regulators,inverters,Motor controls,Solenoid/Relay drivers
and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
700 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
9V
IC Collector Current-Continuous
8A
ICM Collector Current-peak
16 A
IB Base Current
4A
IBM Base Current-Peak
8A
IE Emitter Current
12 A
IEM Emitter Current-Peak
PC
Collector Power Dissipation
TC=25
Ti Junction Temperature
Tstg Storage Temperature Range
24
80
150
-65~150
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
MAX UNIT
1.56 /W
62.5 /W
isc Product Specification
3DG13007
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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