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2N3173 PDF Data sheet ( 特性 )

部品番号 2N3173
部品説明 Silicon PNP Power Transistor
メーカ Inchange Semiconductor
ロゴ Inchange Semiconductor ロゴ 



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2N3173 Datasheet, 2N3173 PDF,ピン配置, 機能
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N3173
DESCRIPTION
·Excellent Safe Operating Area
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.75V(Max)@ IC = -1A
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·All semelab hermetically sealed products,can be processed
in accordance with the requirements of BS,CECC,and
JAN,JANTX and JANTXV and JAN specifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80 V
VCEO
Collector-Emitter Voltage
-80 V
VEBO
Emitter-Base Voltage
-10 V
IC Collector Current-Continuous
-3 A
PC
TJ, Tstg
Collector Power Dissipation@TC=25
75
Operating and Storage Junction
Temperature Range
-65~+150
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.67 /W
isc websitewww.iscsemi.com1
isc & iscsemi is registered trademark

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