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PDF 2SA1646-Z Data sheet ( Hoja de datos )

Número de pieza 2SA1646-Z
Descripción Silicon Power Transistor
Fabricantes Renesas 
Logotipo Renesas Logotipo



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2SA1646,2SA1646-Z
Silicon Power Transistor
Preliminary Data Sheet
R07DS0048EJ0200
Rev.2.00
Jul 01, 2010
Description
The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-to-
emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers,
solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching.
Features
Fast switching speed
Low collector-to-emitter saturation voltage:
VCE(sat) = 0.3 V MAX. @IC = 6 A
Absolute Maximum Ratings (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current
Base current
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ID(DC)
IC(pulse)
IB(DC)
PT
PT
Tj
Tstg
Conditions
PW 300 μs, duty cycle 10%
Tc = 25°C
Ta = 25°C
Ratings
150
100
7.0
10
20
6.0
40
1.5
150
55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
Package Drawing (Unit: mm)
?
?
?
?
Electrode Connection
?
R07DS0048EJ0200 Rev.2.00
Jul 01, 2010
Page 1 of 4

1 page




2SA1646-Z pdf
Revision History
2SA1646,2SA1646-Z Data Sheet
Rev.
1.00
2.00
Date
Apr 12, 2002
Jul 01, 2010
Page
-
p.1
Throughout
Description
Summary
First Edition issued (D16120EJ1V0DS00)
Deletion of the description “Mold package that does not require an insulating
board or insulation bushing” in Features.
Deletion of Quality Grades.
Change of the format to Renesas Electronics Corporation's new format.
All trademarks and registered trademarks are the property of their respective owners.
C-1

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