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PDF 2SC3989 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3989 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3989
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 500V(Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800 V
VCEO
Collector-Emitter Voltage
500 V
VEBO
Emitter-Base voltage
7V
IC Collector Current-Continuous 25 A
ICM Collector Current-Peak
40 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
8A
200 W
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC3989.PDF ] | |
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