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PDF 2SD2633 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2633 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2633
DESCRIPTION
·High DC Current Gain-
: hFE = 2000(Min)@ IC= 6A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) =1.5V(Max)@ IC= 6A
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200 V
VCEO
Collector-Emitter Voltage
150 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
8A
IB Base Current
Collector Power Dissipation
PC
TC=25℃
Collector Power Dissipation
Ta=25℃
Tj Junction Temperature
1A
35
W
2
150 ℃
Tstg Storage Temperature Range
-65~150 ℃
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD2633.PDF ] | |
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