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PDF 2SD1802 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1802 | |
| Descripción | NPN Transistor | |
| Fabricantes | TRANSYS | |
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Transys
Electronics
LIMITED
TO-251/TO-252-2Plastic-Encapsulated Transistors
2SD1802 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM:
1 W (Tamb=25℃)
Collector current
ICM: 3
Collector-base voltage
A
V(BR)CBO: 60 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-251
TO-252-2
6. 5 0¡ À0. 10
5. 3 0¡ À0. 05
0. 5 1¡ À0 . 03
2 . 30¡ À0. 05
5¡ ã
0. 80¡ À0. 0 5
0. 6 0¡ À0. 0 5
5¡ ã
5¡ ã
1. BASE
2. 3 0¡ À0. 05
2. 3 0¡ À0. 0 5
1 . 20
0. 51 ¡ À0 . 03
2. COLLECTOR
123
3. EMITTER
2. 30¡ À0. 10
6. 50¡ À0. 15
5. 30¡ À0. 10
0. 51¡ À0. 05
2. 30¡ À0. 10
1. 20
0. 51¡ À0. 10
0¡ 0«. 10
5¡ ã
5¡ ã
5¡ ã
0. 80¡ À0. 10
0. 60¡ À0. 10
2. 30¡ À0. 10
0¡¡ ã«9¡ ã
0. 51
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
hFE(1)
hFE(2)
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Transition frequency
fT
Collector output capacitance
Cob
Turn-off time
ton
Fall time
tf
Storage time
CLASSIFICATION OF hFE(1)
Rank
R
Range
100-200
Marking
ts
Test conditions
Ic=10µAµ, IE=0
Ic=1mA, IB=0
IE=10µA, IC=0
VCB=40V, IE=0
VEB=4V, IC=0
VCE=2V, IC=100mA
VCE=2V, IC=3A
IC=2A, IB=100mA
IC=2A, IB=100mA
VCE=10V, IC=50mA
VCB=10V, IE=0,f=1MHz
Vcc=25V, Ic=1A
IB1=-IB2=0.1A
MIN TYP MAX UNIT
60 V
50 V
6V
1 µA
1 µA
100 560
35
0.5 V
1.2 V
150 MHz
25 pF
70
650 nS
35
S
140-280
T
200-400
U
280-560
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD1802.PDF ] | |
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