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Datasheet 2SD1758 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SD1758 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1758
DESCRIPTION ·Large current capacitance ·Low Vce(sat) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor
drive |  Inchange Semiconductor | transistor |
| 2 | 2SD1758 | PNP Transistor RoHS 2SD1758
2SD1758 TRANSISTOR (PNP)
TO-252-2
DFEATURES TPower dissipation
.,LPCM:
2 W (Tamb=25℃)
Collector current
ICM: 2 A Collector-base voltage
OV(BR)CBO: 40 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
1. BASE 2. COLLECTOR 3. EMITTER
1 23
ICELECTR |  WEJ | transistor |
| 3 | 2SD1758 | Medium Power Transistor Medium power transistor (32V, 2A)
2SD1766 / 2SD1758 / 2SD1862
Features 1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240
Structure Epitaxial planar type NPN silicon transistor
0.5±0.1
Dimensions (Unit : mm)
2SD1766
4.5+−00..21 |  ROHM Semiconductor | transistor |
| 4 | 2SD1758 | Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
TO-252-2 Plastic-Encapsulated Transistors
2SD1758
TO-252-2
TRANSISTOR (PNP)
FEATURES Power dissipation PCM: 2 W (Tamb=25℃)
1. BASE
2. COLLECTOR
3. EMITTER
Collector current 2 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and st |  TRANSYS | transistor |
| 5 | 2SD1758 | Medium Power Transistor
SMD Type
Medium Power Transistor 2SD1758
TO-252
Transistors
Features
Low VCE(sat), VCE(sat) = 0.5V (IC = 2A, IB = 0.2A). Epitaxial planar type
+0.2 9.70 -0.2 +0.15 1.50 -0.15
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
NPN silicon transistor
+0.1 |  Guangdong Kexin Industrial | transistor |
2SD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SD0592A | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0592A (2SD592A)
Silicon NPN epitaxial planar type
For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features
0.7±0.2
Unit: mm
5.0±0.2 4.0±0.2
• Large collector power dissipation PC • Low collector-emitter saturation voltage V  Panasonic Semiconductor transistor | | |
| 2 | 2SD0601 | Silicon NPN epitaxial planer type Transistor
2SD601A
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB709A
2.8 –0.3
+0.2
Unit: mm
s Features
q q q
0.65±0.15
+0.25 1.5 –0.05
0.65±0.15
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type pac Panasonic Semiconductor transistor | | |
| 3 | 2SD0601A | Silicon NPN epitaxial planer type Transistor Transistor
2SD0601A (2SD601A)
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB0709A (2SB709A)
I Features
G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and
a Panasonic Semiconductor transistor | | |
| 4 | 2SD0602 | Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t Panasonic Semiconductor transistor | | |
| 5 | 2SD0602A | Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t Panasonic Semiconductor transistor | | |
| 6 | 2SD0638 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0638 (2SD638)
Silicon NPN epitaxial planar type
For medium-power general amplification Complementary to 2SB0643 (2SB643)
(0.4)
(1.5) (1.5)
Unit: mm
6.9±0.1 2.5±0.1 (1.0)
2.0±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitt Panasonic Semiconductor transistor | | |
| 7 | 2SD0662 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0662, 2SD0662B (2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown voltage general amplification
6.9±0.1 2.5±0.1 (1.0)
Unit: mm
(0.4)
(1.5)
2.0±0.2
• High collector-emitter voltage (Base open) VCEO • High transition frequency fT • Panasonic Semiconductor transistor | |
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