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NJVMJB41CT4GのメーカーはON Semiconductorです、この部品の機能は「Complementary Silicon Plastic Power Transistors」です。 |
部品番号 | NJVMJB41CT4G |
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部品説明 | Complementary Silicon Plastic Power Transistors | ||
メーカ | ON Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとNJVMJB41CT4Gダウンロード(pdfファイル)リンクがあります。 Total 6 pages
MJB41C,
NJVMJB41CT4G (NPN),
MJB42C,
NJVMJB42CT4G (PNP)
Complementary Silicon
Plastic Power Transistors
D2PAK for Surface Mount
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Electrically the Same as TIP41 and T1P42 Series
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current − Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ− Peak
VCEO 100 Vdc
VCB 100 Vdc
VEB 5.0 Vdc
IC 6.0 Adc
10
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
Derate above 25_C
IB 2.0 Adc
PD
65 W
0.52 W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TA = 25_C
Derate above 25_C
PD
2.0 W
0.016
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎUnclamped Inductive Load Energy (Note 1)
E
62.5 mJ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg −65 to +150 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎJunction−to−Ambient
RqJC
RqJA
1.92 _C/W
62.5 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance,
Junction−to−Ambient (Note 2)
RqJA
50 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPurposes, 1/8″ from Case for 10 Seconds
TL
260 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W
2. When surface mounted to an FR−4 board using the minimum recommended
pad size.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 4
1
http://onsemi.com
COMPLEMENTARY SILICON
POWER TRANSISTORS
6 AMPERES,
100 VOLTS, 65 WATTS
MARKING
DIAGRAM
D2PAK
CASE 418B
STYLE 1
J4xCG
AYWW
J4xC
A
Y
WW
G
= Specific Device Code
x = 1 or 2
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
MJB41CG
D2PAK
50 Units / Rail
(Pb−Free)
MJB41CT4G
D2PAK
(Pb−Free)
800 / Tape &
Reel
NJVMJB41CT4G
D2PAK
(Pb−Free)
800 / Tape &
Reel
MJB42CG
D2PAK
50 Units / Rail
(Pb−Free)
MJB42CT4G
D2PAK
(Pb−Free)
800 / Tape &
Reel
NJVMJB42CT4G
D2PAK
(Pb−Free)
800 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MJB41C/D
1 Page MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP)
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.07 0.05
0.05
0.02
0.03
0.02 0.01
SINGLE PULSE
0.01
0.01 0.02
0.05 1.0
0.2
ZqJC(t) = r(t) RqJC
RqJC = 1.92°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1.0
2.0 5.0
t, TIME (ms)
10
20
50 100 200
500
Figure 4. Thermal Response
1.0 k
10
5.0
3.0 1.0 ms
2.0
SECONDARY BREAKDOWN LTD
1.0 BONDING WIRE LTD
THERMAL LIMITATION @ TC = 25°C
0.5 (SINGLE PULSE)
0.3 CURVES APPLY BELOW RATED VCEO
0.2
0.5 ms
5.0 ms
0.1
5.0 10 20 40 60 80 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active−Region Safe Operating Area
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.06
0.1
TJ = 25°C
VCC = 30 V
ts
IC/IB = 10
IB1 = IB2
tf
0.2 0.4 0.6 1.0 2.0
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn−Off Time
4.0 6.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
300
TJ = 25°C
200
Cib
100
70
Cob
50
30
0.5 1.0 2.0 3.0 5.0 10 20 30 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
http://onsemi.com
3
3Pages MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP)
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MJB41C/D
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部品番号 | 部品説明 | メーカ |
NJVMJB41CT4G | Complementary Silicon Plastic Power Transistors | ON Semiconductor |