DataSheet.jp

MJ3055 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 MJ3055
部品説明 Silicon NPN Power Transistor
メーカ Inchange Semiconductor
ロゴ Inchange Semiconductor ロゴ 



Total 2 pages
		

No Preview Available !

MJ3055 Datasheet, MJ3055 PDF,ピン配置, 機能
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJ3055
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-hFE=20-70@IC = 4A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
APPLICATIONS
·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
60 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
10 A
IB Base Current
7A
PC
TJ, Tstg
Collector Power Dissipation@TC=25
117
Operating and Storage Junction
Temperature Range
-55~+200
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.52 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

1 Page





ページ 合計 : 2 ページ
PDF
ダウンロード
[ MJ3055.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
MJ3055

Silicon NPN Power Transistor

Inchange Semiconductor
Inchange Semiconductor
MJ3055

Bipolar NPN Device

Seme LAB
Seme LAB

www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap