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5N60 の電気的特性と機能

5N60のメーカーはnELLです、この部品の機能は「N-Channel Power MOSFET / Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 5N60
部品説明 N-Channel Power MOSFET / Transistor
メーカ nELL
ロゴ nELL ロゴ 




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5N60 Datasheet, 5N60 PDF,ピン配置, 機能
SEMICONDUCTOR
5N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(5A, 600Volts)
DESCRIPTION
The Nell 5N60 is a three-terminal silicon
device with current conduction capability
of 5A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
FEATURES
RDS(ON) = 2.2Ω@VGS = 10V
Ultra low gate charge(20nC max.)
Low reverse transfer capacitance
(CRSS = 6.5pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-251 (I-PAK)
(5N60F)
D
D
G
S
TO-252 (D-PAK)
(5N60G)
GDS
TO-220AB
(5N60A)
GDS
TO-220F
(5N60AF)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
5
600
2.2 @ VGS = 10V
20
D (Drain)
G
(Gate)
S (Source)
www.nellsemi.com
Page 1 of 8

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5N60 pdf, ピン配列
SEMICONDUCTOR
5N60 Series RRooHHSS
Nell High Power Products
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min.
V(BR)DSS Drain to Source breakdown voltage
ID=250µA,VGS=0V
600
∆V(BR)DSS/∆TJ Breakdown voltage temperature coefficient
IDSS
Drain to source leakage current
IGSS
RDS(ON)
Gate to source forward leakage current
Gate to source reverse leakage current
Static drain to source on-state resistance
ID=250µA,VDS=VGS
VDS=600V, VGS=0V TC=25°C
VDS=480V, VGS=0V TC=125°C
VGS=30V,VDS=0V
VGS=-30V,VDS=0V
ID=2.5A,VGS=10V
VGS(TH) Gate threshold voltage
VGS=VDS,ID=250µA
2
CISS
Input capacitance
COSS
Output capacitance
VDS=25V, VGS=0V, f=1MHz
CRSS
Reverse transfer capacitance
Typ.
0.6
1.8
515
55
6.5
Max.
10
100
100
-100
2.2
4.0
670
72
8.5
td(ON)
tr
td(OFF)
Turn-on delay time
Rise time
Turn-off delay time
VDD=300V, VGS=10V,
ID=5A, RGS=25Ω (Note 1, 2)
10 30
42 90
38 85
tf
QG
QGS
QGD
Fall time
Total gate charge
Gate to source charge
Gate to drain charge (Miller cgarge)
VDD=480V,VGS=10V,
ID=5A (Note 1,2)
45 100
15 20
2.5
6.5
UNIT
V
V/°C
µA
nA
V
pF
ns
nC
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD Diode forward voltage
ISD = 5A, VGS = 0V
1.4 V
Is (IsD)
Continuous source to drain current
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
5
ISM Pulsed source current
trr Reverse recovery time
Qrr Reverse recovery charge
Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
G
(Gate)
S (Source)
ISD = 5A, VGS = 0V,
dIF/dt = 100A/µs
A
20
300 ns
2.2 µC
www.nellsemi.com
Page 3 of 9


3Pages


5N60 電子部品, 半導体
SEMICONDUCTOR
TYPICAL CHARACTERISTICS
Fig.1 On-State characteristics
101 TOP:
VGS
5.0V
Bottorm: 4.5V
100
5V
10-1
4.5V
10-2
10-1
*Notes:
1.250µs Pulse test
2.Tc=25°C
100 101
Drain-source voltage, VDS (V)
5N60 Series RRooHHSS
Nell High Power Products
Fig.2 Transfer characteristics
101
25°C
100
10-1
2
*Notes:
1.VDS=40V
2.250µs pulse test
4 68
Gate-source voltage, VGS (V)
10
Fig.3 On-resistance variation vs.
drain current and gate voltage
6
5
VGS=10V
4
VGS=20V
3
2
1
*Note:TJ=25°C
0
0 2 4 6 8 10
Drain current, ID (A)
Fig.4 Maximum safe operating area
Operation in this area
is limited by RDS(ON)
100µs
101
1ms
100
100ms 10ms
DC
10-1
10-2
100
*Notes:
1.TC=25°C
2.TJ=150°C
3.Single pulse
101
102
Drain-source voltage, VSD (V)
103
www.nellsemi.com
Page 6 of 8

6 Page



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共有リンク

Link :


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5N60

N-Channel Power MOSFET / Transistor

nELL
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