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2SD1980 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 2SD1980
部品説明 Silicon NPN Power Transistor
メーカ Inchange Semiconductor
ロゴ Inchange Semiconductor ロゴ 

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2SD1980 Datasheet, 2SD1980 PDF,ピン配置, 機能
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1980
DESCRIPTION
·Darlington connection for high DC current gain
·Built in resistor between base and emitter
·Built in damper diode
·Complementary PNP types:2SB1316
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Motor drivers,LED driver,Power supply
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous 2.0 A
ICM Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
3.0 A
10 W
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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