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2SD1918 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 2SD1918
部品説明 Silicon NPN Power Transistor
メーカ Inchange Semiconductor
ロゴ Inchange Semiconductor ロゴ 

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2SD1918 Datasheet, 2SD1918 PDF,ピン配置, 機能
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1918
DESCRIPTION
·Suitable for middle power drivers
·High voltage:VCEO=160V
·Complementary PNP types:2SB1275
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Motor drivers,LED driver,Power supply
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160 V
VCEO
Collector-Emitter Voltage
160 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous 1.5 A
ICM Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
3.0 A
10 W
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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