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PDF 2SD1640 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1640 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1640
DESCRIPTION
·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = 100V(Min)
·DC Current Gain—
: hFE = 4000(Min) @ IC= 1 A
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use as output devices in complementary
general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
2A
ICM Collector Current-Peak
PC
Collector Power Dissipation
TC=25℃
Ti Junction Temperature
Tstg Storage Temperature Range
3
20
150
-55~150
A
W
℃
℃
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD1640.PDF ] | |
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