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2SD1640 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 2SD1640
部品説明 Silicon NPN Power Transistor
メーカ Inchange Semiconductor
ロゴ Inchange Semiconductor ロゴ 

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2SD1640 Datasheet, 2SD1640 PDF,ピン配置, 機能
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1640
DESCRIPTION
·Collector–Emitter Breakdown Voltage
: V(BR)CEO = 100V(Min)
·DC Current Gain
: hFE = 4000(Min) @ IC= 1 A
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use as output devices in complementary
general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
2A
ICM Collector Current-Peak
PC
Collector Power Dissipation
TC=25
Ti Junction Temperature
Tstg Storage Temperature Range
3
20
150
-55~150
A
W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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