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2SC3518-Z PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 2SC3518-Z
部品説明 Silicon NPN Power Transistor
メーカ Inchange Semiconductor
ロゴ Inchange Semiconductor ロゴ 

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2SC3518-Z Datasheet, 2SC3518-Z PDF,ピン配置, 機能
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3518-Z
DESCRIPTION
·Low collector saturation voltage
·High DC current gain
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·This transistor is ideal for audio frequency amplifier and
switching especially in hybrid integrated circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage
60 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous 5 A
ICM Collector Current-Peak NOTE1
PC
Collector Power Dissipation
@Ta=25NOTE2
TJ Junction Temperature
7A
2W
150
Tstg Storage Temperature Range
NOTE1:PW≤300ms,Duty cycle ≤10%
NOTE2:Printing boarding mounted
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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