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2SB1669-Z PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 2SB1669-Z
部品説明 Silicon PNP Power Transistor
メーカ Inchange Semiconductor
ロゴ Inchange Semiconductor ロゴ 

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2SB1669-Z Datasheet, 2SB1669-Z PDF,ピン配置, 機能
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1669-Z
DESCRIPTION
·High DC current amplifier rate
hFE≥100@VCE=-5V,IC=-0.5A
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·The 2SB1669-Z is a power transistor that can be directly driven
from the output of an IC.This transistor is ideal for OA and FA
equipment such as motor and solenoid drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60 V
VCEO Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-7 V
IC Collector Current-Continuous
-3 A
ICP Collector Current-Pulse
-6 A
PC
Total Power Dissipation
@ Ta=25
1.5 W
PC
Total Power Dissipation
@ TC=25
25 W
TJ Junction Temperature
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
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