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2SB1412 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 2SB1412
部品説明 Silicon PNP Power Transistor
メーカ Inchange Semiconductor
ロゴ Inchange Semiconductor ロゴ 

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2SB1412 Datasheet, 2SB1412 PDF,ピン配置, 機能
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1412
DESCRIPTION
·Small and slim package making it easy to make 2SB1205-used set smaller
·Low collector-to-emitter saturation voltage
·Fast switching speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-30 V
VCEO
Collector-Emitter Voltage
-20 V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous
PC
Collector Power Dissipation
@ Ta=25
TJ Junction Temperature
-5 A
1.0 W
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
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