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MBR16150CT PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 MBR16150CT
部品説明 Schottky Barrier Rectifier
メーカ Inchange Semiconductor
ロゴ Inchange Semiconductor ロゴ 



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MBR16150CT Datasheet, MBR16150CT PDF,ピン配置, 機能
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR16150CT
FEATURES
·Metal of silicon rectifier, majonty carrier conduction
·Guard ring for transient protection
·Low power loss high efficiency
·High current capability,low VF
·High surge capacity
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
· Designed for in low voltage,high frequency invertersfree
wheeling,and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
VR(RMS)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltag
IF(AV)
IFSM
Average Rectified Forward Current
(Rated VR) TC= 125
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
150
105
16
150
V
V
A
A
TJ Junction Temperature
-55~150
Tstg Storage Temperature Range
-55~175
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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