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PDF MBR10200CT Data sheet ( Hoja de datos )
| Número de pieza | MBR10200CT | |
| Descripción | Schottky Barrier Rectifier ( Diode ) | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10200CT
FEATURES
·Metal silicon junction，majority carrier conduction
·Low Power Loss/High Efficiency
·High current capability，low forward voltage drop
·High surge capability
·Guardring for overvoltage protection
·High temperature soldering guaranteed
·RoHS product
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low-voltage,high frequency inverters，free wheeling
and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRRM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC= 125℃
Peak Repetitive Forward Current
(Rated VR,Square Wave,20kHz) TC= 125℃
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
Peak Repetitive Reverse Surge Current
(20μs, 1.0kHz)
200
10
32
120
0.5
V
A
A
A
A
TJ Junction Temperature
-65~150 ℃
Tstg Storage Temperature Range
-65~175 ℃
dv/dt Voltage Rate of Change (Rated VR)
10,000 V/μs
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBR10200CT.PDF ] | |
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