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MBR10200 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 MBR10200
部品説明 Schottky Barrier Rectifier
メーカ Inchange Semiconductor
ロゴ Inchange Semiconductor ロゴ 



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MBR10200 Datasheet, MBR10200 PDF,ピン配置, 機能
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10200
FEATURES
·Metal silicon junctionmajority carrier conduction
·Low Power Loss/High Efficiency
·High current capabilitylow forward voltage drop
·High surge capability
·Guardring for overvoltage protection
·High temperature soldering guaranteed
·RoHS product
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low-voltage,high frequency invertersfree wheeling
and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRRM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR)
Peak Repetitive Forward Current
(Rated VR,Square Wave,20kHz) TC= 135
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
Peak Repetitive Reverse Surge Current
(20μs, 1.0kHz)
200
10
20
150
0.5
V
A
A
A
A
TJ Junction Temperature
-65~150
Tstg Storage Temperature Range
-65~175
dv/dt Voltage Rate of Change (Rated VR)
10,000 V/μs
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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