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Número de pieza | MBR10120 | |
Descripción | Schottky Barrier Rectifier ( Diode ) | |
Fabricantes | Inchange Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MBR10120 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10120
FEATURES
·Low Reverse Current
·Low Stored Charge, Majority Carrier Conduction
·Low Power Loss/High Efficiency
·Highly Stable Oxide Passivated Junction
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High Frequency switch power Supply
·Free wheeling diodes and polarity protection applicationsds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM
VRWM
VR
VRMS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Maximum RMS Reverse Voltage
VALUE UNIT
120 V
70 V
IF(AV)
IFSM
TJ
Average Rectified Forward Current
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
10
110
A
A
Junction Temperature
-55~150 ℃
Tstg Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MBR10120.PDF ] |
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MBR10120 | Schottky Barrier Rectifier ( Diode ) | Inchange Semiconductor |
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