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MBR10120 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 MBR10120
部品説明 Schottky Barrier Rectifier
メーカ Inchange Semiconductor
ロゴ Inchange Semiconductor ロゴ 



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MBR10120 Datasheet, MBR10120 PDF,ピン配置, 機能
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10120
FEATURES
·Low Reverse Current
·Low Stored Charge, Majority Carrier Conduction
·Low Power Loss/High Efficiency
·Highly Stable Oxide Passivated Junction
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High Frequency switch power Supply
·Free wheeling diodes and polarity protection applicationsds
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VRRM
VRWM
VR
VRMS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Maximum RMS Reverse Voltage
VALUE UNIT
120 V
70 V
IF(AV)
IFSM
TJ
Average Rectified Forward Current
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
10
110
A
A
Junction Temperature
-55~150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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