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AT49F512 の電気的特性と機能

AT49F512のメーカーはATMEL Corporationです、この部品の機能は「512K 5-volt Only Flash Memory」です。


製品の詳細 ( Datasheet PDF )

部品番号 AT49F512
部品説明 512K 5-volt Only Flash Memory
メーカ ATMEL Corporation
ロゴ ATMEL Corporation ロゴ 




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AT49F512 Datasheet, AT49F512 PDF,ピン配置, 機能
Features
Single Voltage Operation
– 5V Read
– 5V Reprogramming
Fast Read Access Time – 55 ns
Internal Program Control and Timer
8K Bytes Boot Block With Lockout
Fast Erase Cycle Time – 10 Seconds
Byte-by-byte Programming – 10 µs/Byte
Hardware Data Protection
DATA Polling For End of Program Detection
Low Power Dissipation
– 30 mA Active Current
– 100 µA CMOS Standby Current
Typical 10,000 Write Cycles
Green (Pb/Halide-free) Packaging Option
1. Description
The AT49F512 is a 5-volt-only in-system programmable and erasable Flash memory.
Its 512K of memory is organized as 65,536 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to
55 ns with a power dissipation of just 165 mW over the commercial temperature
range. When the device is deselected, the CMOS standby current is less than 100 µA.
To allow for simple in-system reprogrammability, the AT49F512 does not require high
input voltages for programming. Five-volt-only commands determine the read and
programming operation of the device. Reading data out of the device is similar to
reading from an EPROM. Reprogramming the AT49F512 is performed by erasing the
entire 512K of memory and then programming on a byte-by-byte basis. The typical
byte programming time is a fast 10 µs. The end of a program cycle can be optionally
detected by the DATA polling feature. Once the end of a byte program cycle has been
detected, a new access for a read or program can begin. The typical number of pro-
gram and erase cycles is in excess of 10,000 cycles.
The optional 8K bytes boot block section includes a reprogramming write lock out fea-
ture to provide data integrity. The boot sector is designed to contain user secure code,
and when the feature is enabled, the boot sector is permanently protected from being
reprogrammed.
512K (64K x 8)
5-volt Only
Flash Memory
AT49F512
1027F–FLASH–3/05

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AT49F512 pdf, ピン配列
3. Block Diagram
AT49F512
FFFFH
2000H
1FFFH
0000H
4. Device Operation
4.1 Read
The AT49F512 is accessed like an EPROM. When CE and OE are low and WE is high, the data
stored at the memory location determined by the address pins is asserted on the outputs. The
outputs are put in the high impedance state whenever CE or OE is high. This dual-line control
gives designers flexibility in preventing bus contention.
4.2 Erasure
Before a byte can be reprogrammed, the 64K bytes memory array (or 56K bytes if the boot block
featured is used) must be erased. The erased state of the memory bits is a logical “1”. The entire
device can be erased at one time by using a 6-byte software code. The chip erase code consists
of 6-byte load commands to specific address locations with a specific data pattern (please refer
to the Chip Erase Cycle Waveforms).
After the chip erase has been initiated, the device will internally time the erase operation so that
no external clocks are required. The maximum time needed to erase the whole chip is tEC. If the
boot block lockout feature has been enabled, the data in the boot sector will not be erased.
4.3 Byte Programming
Once the memory array is erased, the device is programmed (to a logical “0”) on a byte-by-byte
basis. Please note that a data “0” cannot be programmed back to a “1”; only erase operations
can convert “0”s to “1”s. Programming is accomplished via the internal device command register
and is a 4 bus cycle operation (please refer to the Command Definitions table). The device will
automatically generate the required internal program pulses.
The program cycle has addresses latched on the falling edge of WE or CE, whichever occurs
last, and the data latched on the rising edge of WE or CE, whichever occurs first. Programming
is completed after the specified tBP cycle time. The DATA polling feature may also be used to
indicate the end of a program cycle.
1027F–FLASH–3/05
3


3Pages


AT49F512 電子部品, 半導体
7. DC and AC Operating Range
Industrial Operating Temperature (Case)
VCC Power Supply
AT49F512-55
-40°C - 85°C
5V ± 10%
8. Operating Modes
Mode
CE OE WE
Ai
Read
Program(2)
Standby/Write Inhibit
Program Inhibit
Program Inhibit
Output Disable
Product Identification
VIL VIL VIH
VIL VIH VIL
VIH X(1) X
X X VIH
X VIL X
X VIH X
Ai
Ai
X
Hardware
VIL VIL VIH
A1 - A15 = VIL, A9 = VH, A0 = VIL(3)
A1 - A15 = VIL, A9 = VH, A0 = VIH(3)
Software(5)
Notes: 1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
A0 = VIL, A1 - A15 = VIL
A0 = VIH, A1 - A15 = VIL
3. VH = 12.0V ± 0.5V.
4. Manufacturer Code: 1FH, Device Code: 03H
5. See details under Software Product Identification Entry/Exit.
9. DC Characteristics
Symbol Parameter
ILI Input Load Current
ILO Output Leakage Current
Condition
VIN = 0V to VCC
VI/O = 0V to VCC
ISB1 VCC Standby Current CMOS CE = VCC - 0.3V to VCC
ISB2
VCC Standby Current TTL
CE = 2.0V to VCC
ICC(1)
VCC Active Current
f = 5 MHz; IOUT = 0 mA
VIL
VIH
VOL
VOH1
VOH2
Note:
Input Low Voltage
Input High Voltage
Output Low Voltage
IOL = 2.1 mA
Output High Voltage
IOH = -400 µA
Output High Voltage CMOS IOH = -100 µA; VCC = 4.5V
1. In the erase mode, ICC is 90 mA.
Com.
Ind.
Com.
Ind.
Min
2.0
2.4
4.2
6 AT49F512
I/O
DOUT
DIN
High Z
High Z
Manufacturer Code(4)
Device Code(4)
Manufacturer Code(4)
Device Code(4)
Max Units
10 µA
10 µA
100 µA
300 µA
3 mA
30 mA
40 mA
0.8 V
V
0.45 V
V
V
1027F–FLASH–3/05

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部品番号部品説明メーカ
AT49F512

512K 5-volt Only Flash Memory

ATMEL Corporation
ATMEL Corporation


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