AT49F512 PDF Data sheet ( 特性 )

部品番号 AT49F512
部品説明 512K 5-volt Only Flash Memory
ロゴ ATMEL ロゴ 

Total 18 pages

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AT49F512 Datasheet, AT49F512 PDF,ピン配置, 機能
Single Voltage Operation
– 5V Read
– 5V Reprogramming
Fast Read Access Time – 55 ns
Internal Program Control and Timer
8K Bytes Boot Block With Lockout
Fast Erase Cycle Time – 10 Seconds
Byte-by-byte Programming – 10 µs/Byte
Hardware Data Protection
DATA Polling For End of Program Detection
Low Power Dissipation
– 30 mA Active Current
– 100 µA CMOS Standby Current
Typical 10,000 Write Cycles
Green (Pb/Halide-free) Packaging Option
1. Description
The AT49F512 is a 5-volt-only in-system programmable and erasable Flash memory.
Its 512K of memory is organized as 65,536 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to
55 ns with a power dissipation of just 165 mW over the commercial temperature
range. When the device is deselected, the CMOS standby current is less than 100 µA.
To allow for simple in-system reprogrammability, the AT49F512 does not require high
input voltages for programming. Five-volt-only commands determine the read and
programming operation of the device. Reading data out of the device is similar to
reading from an EPROM. Reprogramming the AT49F512 is performed by erasing the
entire 512K of memory and then programming on a byte-by-byte basis. The typical
byte programming time is a fast 10 µs. The end of a program cycle can be optionally
detected by the DATA polling feature. Once the end of a byte program cycle has been
detected, a new access for a read or program can begin. The typical number of pro-
gram and erase cycles is in excess of 10,000 cycles.
The optional 8K bytes boot block section includes a reprogramming write lock out fea-
ture to provide data integrity. The boot sector is designed to contain user secure code,
and when the feature is enabled, the boot sector is permanently protected from being
512K (64K x 8)
5-volt Only
Flash Memory

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512K 5-volt Only Flash Memory

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