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IS64VF12836EC の電気的特性と機能

IS64VF12836ECのメーカーはISSIです、この部品の機能は「SYNCHRONOUS FLOW-THROUGH SRAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 IS64VF12836EC
部品説明 SYNCHRONOUS FLOW-THROUGH SRAM
メーカ ISSI
ロゴ ISSI ロゴ 




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IS64VF12836EC Datasheet, IS64VF12836EC PDF,ピン配置, 機能
IS61(4)LF12836EC/IS61(4)VF12836EC/IS61(4)LF12832EC
IS61(4)VF12832EC/IS61(4)LF25618EC/IS61(4)VF25618EC
128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH
SRAM
FEATURES
DESCRIPTION
OCTOBER 2015
Internal self-timed write cycle
Individual Byte Write Control and Global Write
Clock controlled, registered address, data and
control
Burst sequence control using MODE input
Three chip enable option for simple depth
expansion and address pipelining
Common data inputs and data outputs
Auto Power-down during deselect
The 4Mb product family features high-speed, low-power
synchronous static RAMs designed to provide burstable,
high-performance memory for communication and
networking applications. The IS61(64)LF/VF12836EC are
organized as 131,072 words by 36bits. The
IS61(64)LF/VF12832EC are organized as 131,072 words by
32bits. The IS61(64)LF/VF25618EC are organized as 262,144
words by 18 bits. Fabricated with ISSI's advanced CMOS
technology, the device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs
into a single monolithic circuit. All synchronous inputs pass
through registers controlled by a positive-edge-triggered
single clock input.
Single cycle deselect
Snooze MODE for reduced-power standby
JEDEC 100-pin QFP, 165-ball BGA and 119-ball
BGA packages
Power supply:
LF: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%)
VF: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%)
JTAG Boundary Scan for BGA packages
Industrial and Automotive temperature support
Lead-free available
Error Detection and Error Correction
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
The byte write operation is performed by using the byte
write enable (/BWE) input combined with one or more
individual byte write signals (/BWx). In addition, Global
Write (/GW) is available for writing all bytes at one time,
regardless of the byte write controls.
Bursts can be initiated with either /ADSP (Address Status
Processor) or /ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the /ADV (burst address
advance) input pin.
FAST ACCESS TIME
Symbol
Parameter
The mode pin is used to select the burst sequence order.
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
-6.5 -7.5 Units
tKQ Clock Access Time
6.5
7.5
ns
tKC Cycle time
7.5 8.5
ns
Frequency
133 117
MHz
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc.- www.issi.com
Rev. C1
09/30/2015
1

1 Page





IS64VF12836EC pdf, ピン配列
IS61(4)LF12836EC/IS61(4)VF12836EC/IS61(4)LF12832EC
IS61(4)VF12832EC/IS61(4)LF25618EC/IS61(4)VF25618EC
PIN CONFIGURATION
128K x 36, 165-Ball BGA (Top View)
12
A NC
A
B NC
A
C DQPc NC
D DQc DQc
E DQc DQc
F DQc DQc
G DQc DQc
H NC
VSS
J DQd DQd
K DQd DQd
L DQd DQd
M DQd DQd
N DQPd NC
P NC NC
R MODE NC
3
/CE
CE2
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
NC
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
A
A
4
/BWc
/BWd
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
A
A
5
/BWb
/BWa
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NC
TDI
TMS
6
/CE2
CLK
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NC
A1*
A0*
7
/BWE
/GW
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NC
TDO
TCK
8
/ADSC
/OE
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
A
A
9
/ADV
/ADSP
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
NC
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
A
A
10
A
A
NC
DQb
DQb
DQb
DQb
NC
DQa
DQa
DQa
DQa
NC
A
A
11
NC
NC
DQPb
DQb
DQb
DQb
DQb
ZZ
DQa
DQa
DQa
DQa
DQPa
NC
A
Note: A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired
PIN DESCRIPTIONS
Symbol
CLK
Pin Name
Synchronous Clock
A0,A1
Synchronous Burst Address Inputs
A Synchronous Address Inputs
/ADV
Synchronous Burst Address Advance
/ADSP
Synchronous Address Status Processor
/ADSC
Synchronous Address Status Controller
MODE
Burst Sequence Selection
/CE,CE2,/CE2
Synchronous Chip Enable
/BWE
Synchronous Byte Write Enable
/BWx (x=a-d)
Synchronous Byte Write Inputs
/GW
Synchronous Global Write Enable
/OE Asynchronous Output Enable
DQx
Synchronous Data Inputs/Outputs
DQPx
Synchronous Parity Data I/O
TCK,TDI,TDO,TMS JTAG Pins
ZZ Asynchronous Power Sleep Mode
Bottom View
165-Ball, 13 mm x 15mm BGA
11 x 15 Ball Array
NC
VDD
VDDQ
VSS
No Connect
Power Supply
I/O Power Supply
Ground
Integrated Silicon Solution, Inc.- www.issi.com
Rev. C1
09/30/2015
3


3Pages


IS64VF12836EC 電子部品, 半導体
IS61(4)LF12836EC/IS61(4)VF12836EC/IS61(4)LF12832EC
IS61(4)VF12832EC/IS61(4)LF25618EC/IS61(4)VF25618EC
128K x 36, 119-Ball BGA (Top View)
12
A VDDQ A
B NC CE2
C NC A
D DQc DQPc
E
DQc
DQc
F
VDDQ
DQc
G
DQc
DQc
H
DQc
DQc
J
VDDQ
VDD
K
DQd
DQd
L
DQd
DQd
M
VDDQ
DQd
N
DQd
DQd
P DQd DQPd
R NC A
T NC NC
U
VDDQ
TMS
3
A
A
A
VSS
VSS
VSS
/BWc
VSS
NC
VSS
/BWd
VSS
VSS
VSS
MODE
A
TDI
4
/ADSP
/ADSC
VDD
NC
/CE
/OE
/ADV
/GW
VDD
CLK
NC
/BWE
A1*
A0*
VDD
A
TCK
5
A
A
A
VSS
VSS
VSS
/BWb
VSS
NC
VSS
/BWa
VSS
VSS
VSS
NC
A
TDO
6
A
/CE2
A
DQPb
DQb
DQb
DQb
DQb
VDD
DQa
DQa
DQa
DQa
DQPa
A
NC
NC
7
VDDQ
NC
NC
DQb
DQb
VDDQ
DQb
DQb
VDDQ
DQa
DQa
VDDQ
DQa
DQa
NC
ZZ
VDDQ
Note: A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
CLK
Pin Name
Synchronous Clock
A0,A1
Synchronous Burst Address Inputs
A Synchronous Address Inputs
/ADV
Synchronous Burst Address Advance
/ADSP
Synchronous Address Status Processor
/ADSC
Synchronous Address Status Controller
MODE
Burst Sequence Selection
/CE,CE2,/CE2
Synchronous Chip Enable
/BWE
Synchronous Byte Write Enable
/BWx (x=a-d)
Synchronous Byte Write Inputs
/GW
Synchronous Global Write Enable
/OE Asynchronous Output Enable
DQx
Synchronous Data Inputs/Outputs
DQPx
Synchronous Parity Data I/O
TCK,TDI,TDO,TMS JTAG Pins
ZZ Asynchronous Power Sleep Mode
Bottom View
119-Ball, 14 mm x 22 mm BGA
7 x 17 Ball Array
NC
VDD
VDDQ
No Connect
Power Supply
I/O Power Supply
VSS Ground
Integrated Silicon Solution, Inc.- www.issi.com
Rev. C1
09/30/2015
6

6 Page



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部品番号部品説明メーカ
IS64VF12836EC

SYNCHRONOUS FLOW-THROUGH SRAM

ISSI
ISSI


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