DataSheet.jp

IS43QR85120A の電気的特性と機能

IS43QR85120AのメーカーはISSIです、この部品の機能は「4Gb DDR4 SDRAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 IS43QR85120A
部品説明 4Gb DDR4 SDRAM
メーカ ISSI
ロゴ ISSI ロゴ 




このページの下部にプレビューとIS43QR85120Aダウンロード(pdfファイル)リンクがあります。
Warning: file_get_contents(): SSL: Connection reset by peer in /home/data39/supply_pdf_ad.html on line 2

Warning: file_get_contents(): Failed to enable crypto in /home/data39/supply_pdf_ad.html on line 2

Warning: file_get_contents(https://widget.octopart.com/_widget/search?q=IS43QR85120A&size=1): failed to open stream: operation failed in /home/data39/supply_pdf_ad.html on line 2

Total 30 pages

No Preview Available !

IS43QR85120A Datasheet, IS43QR85120A PDF,ピン配置, 機能
IS43/46QR16256A
IS43/46QR85120A
512Mx8, 256Mbx16 4Gb DDR4 SDRAM
FEATURES
PRELIMINARY INFORMATION
JULY 2016
Standard Voltage: VDD = VDDQ = 1.2V, VPP=2.5V
High speed data transfer rates with system frequency
up to 2666 Mbps
Data Integrity
- Auto Self Refresh (ASR) by DRAM built-in TS
- Auto Refresh and Self Refresh Modes
DRAM access bandwidth
- Separated IO gating structures by Bank Groups
- Self Refresh Abort
- Fine Granularity Refresh
Signal Synchronization
- Write Leveling via MR settings
- Read Leveling via MPR
Reliability & Error Handling
- Command/Address Parity
- Data bus Write CRC
- MPR readout
- Boundary Scan (x16)
Speed Grade (CL-TRCD-TRP)
- 2133Mbps / 15-15-15 (-093P)
- 2400Mbps / 16-16-16 (-083R)
- 2666Mbps / 18-18-18 (-075U)
Signal Integrity
- Internal VREFDQ Training
- Read Preamble Training
- Gear Down Mode
- Per DRAM Adressability
- Configurable DS for system compatibility
- Configurable On-Die Termination
- Data bus Inversion (DBI)
- ZQ Calibration for DS/ODT impedance accuracy via external
ZQ pad (240 ohm +/- 1%)
Power Saving and efficiency
- POD with VDDQ termination
- Command/Address Latency (CAL)
- Maximum Power Saving
- Low power Auto Self Refresh (LPASR)
Operating Temperature
- Commercial ( Tc = 0 oC to + 95 oC)
- Industrial ( Tc = -40 oC to + 95oC)
- Automotive A1 ( Tc = -40 oC to + 95 oC)
- Automotive A2 ( Tc = -40 oC to + 105 oC)
PPROGRAMMABLE FUNCTIONS
Output Driver Impedance (34/48)
• CAS Write Latency (9/0/11/12/14/16/18)
Additive Latency (0/CL-1/CL-2)
CS# to Command Address (3/4/5/6/8)
• Burst Type (Sequential/Interleaved)
• Write Recovery Time (10/12/14/16/18/20/24)
• Read Preamble (1T/2T)
• Write Preamble (1T/2T)
• Burst Length (BL8/BC4/BC4 or 8 on the fly)
Options
Configuration: 512Mx8, 256Mx16
Package:
- 96-ball FBGA (9mm x 13mm, 0.8mm ball pitch) for x16
- 78-ball FBGA (9mm x 11mm, 0.8mm ball pitch) for x8
ADDRESS TABLE
Parameter
512M x8
256M x16
Row Addressing
A0-A14
A0-A14
Column Addressing A0-A9
A0-A9
Bank Addressing
BA0-BA1
BA0-BA1
Bank Groups
BG0-BG1
BG0-BG1
Page size
1KB 2KB
tRFC
260ns
Copyright © 2016 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its
products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services
described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information
and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or
malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or
effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to
its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. - www.issi.com
Rev. 0A, 06/22/2016
1

1 Page





IS43QR85120A pdf, ピン配列
IS43/46QR16256A
IS43/46QR85120A
1.2 DDR4 SDRAM package ball out 96-ball FBGA x16 (Top View)
Integrated Silicon Solution, Inc. - www.issi.com
Rev. 0A, 06/22/2016
3


3Pages


IS43QR85120A 電子部品, 半導体
IS43/46QR16256A
IS43/46QR85120A
Simplified State Diagram
Power
applied
Power
On
RESET Reset
Procedure
Initialization
ZQCL
Connectivity TEN=0 RESET
Test
TEN=1
Any powered state
ZQ
Calibration
CKE_L
Active
Power
Down
WRITE
Writing
WRITE A
Writing
MPSM
IVREFDQ,
RTT, etc
SRX* = SRX with NOP
Automatic Sequence
Command Sequence
SRX*
MRS
MRS
SRX* PDA
mode
MRS, MPR,
Write Leveling,
VrefDQ training
MRS
MRS MRS
MRS
SRE
CKE_L
Self
Refresh
SRX
ZQCL, ZQCS
Idle
REF Refreshing
PDE
ACT
PDX
Activating
PDX
PDE
WRITE
Bank
Active
WRITE A
WRITE
READ A
READ
READ
CKE_L
Precharge
Power
Down
READ
Reading
WRITE A
READ A
PRE, PREA
PRE, PREA
PRE, PREA
READ A
Reading
Precharging
Abbr. Function
ACT Active
PRE Precharge
PREA Precharge All
ZQCS ZQ Calibration Short
RESET Start RESET Procedure
ZQCL ZQ Calibration Long
Abbr. Function
Read RD, RDS4, RDS8
Read A RDA, RDAS4, RDAS8
Write WR, WRS4, WRS8 with/without CRC
Write A WRA, WRAS4, WRAS8 with/without CRC
TEN Boundary Scan Mode Enable
REF Refresh, Fine granularity Refresh
Abbr. Function
PDE Enter Power-down
PDX Exit Power-down
SRE Self-Refresh entry
SRX Self-Refresh exit
MPR Multi-Purpose Register
MRS Mode Register Set
Integrated Silicon Solution, Inc. - www.issi.com
Rev. 0A, 06/22/2016
6

6 Page



ページ 合計 : 30 ページ
 
PDF
ダウンロード
[ IS43QR85120A データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IS43QR85120A

4Gb DDR4 SDRAM

ISSI
ISSI


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap