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HG2N60 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HG2N60
部品説明 N-Channel Mosfet Transistor
メーカ Inchange Semiconductor
ロゴ Inchange Semiconductor ロゴ 



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HG2N60 Datasheet, HG2N60 PDF,ピン配置, 機能
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES
·Drain Current –ID= 2A@ TC=25
·Drain Source Voltage-
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 4.5Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·High efficiency switch mode power supply.
Charger
UPS power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Plused
PD Total Dissipation @TC=25
Tj Max. Operating Junction Temperature
Tstg Storage Temperature
isc Product Specification
HG2N60
VALUE
600
±30
2
6
50
150
-55~150
UNIT
V
V
A
A
W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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部品番号部品説明メーカ
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N-Channel Mosfet Transistor

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