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PDF NSVBCP69T1G Data sheet ( Hoja de datos )
| Número de pieza | NSVBCP69T1G | |
| Descripción | PNP Silicon Epitaxial Transistor | |
| Fabricantes | ON Semiconductor | |
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BCP69T1G, NSVBCP69T1G
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial Transistor is designed for use in low
voltage, high current applications. The device is housed in the
SOT−223 package, which is designed for medium power surface
mount applications.
Features
• High Current: IC = −1.0 A
• The SOT−223 Package Can Be Soldered Using Wave or Reflow.
• SOT−223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die.
• NPN Complement is BCP68
• AEC−Q101 Qualified and PPAP Capable
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Total Power Dissipation @ TA = 25°C (Note 1)
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
− 20
− 25
− 5.0
−1.0
1.5
12
Vdc
Vdc
Vdc
Adc
W
mW/°C
Operating and Storage Temperature Range
TJ, Tstg − 65 to
150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance − Junction−to−Ambient
(Surface Mounted)
RqJA
83.3 °C/W
Lead Temperature for Soldering,
0.0625 in from case
Time in Solder Bath
TL 260 °C
10 s
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
http://onsemi.com
MEDIUM POWER
PNP SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
4
12
3
SOT−223 (TO−261)
CASE 318E
STYLE 1
MARKING
DIAGRAM
AYW
CEG
G
CE = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
BCP69T1G
SOT−223 1000 / Tape & Reel
(Pb−Free)
NSVBCP69T1G SOT−223 1000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 11
1
Publication Order Number:
BCP69T1/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet NSVBCP69T1G.PDF ] | |
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