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HY3208MのメーカーはHOOYIです、この部品の機能は「N-Channel Enhancement Mode MOSFET」です。 |
部品番号 | HY3208M |
| |
部品説明 | N-Channel Enhancement Mode MOSFET | ||
メーカ | HOOYI | ||
ロゴ | |||
このページの下部にプレビューとHY3208Mダウンロード(pdfファイル)リンクがあります。 Total 14 pages
HY3208P/M/B/PS/PM
N-Channel Enhancement Mode MOSFET
Features
• 80V/120A
R=
DS(ON)
7.0
mΩ
(typ.)
@
V =10V
GS
• 100% avalanche tested
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DS
G
TO-220FB-3L
DS
G
TO-220FB-3M
DS
G
TO-263-2L
Applications
• Power Management for Inverter Systems.
DS
G
TO-3PS-3L
D
DS
G
TO-3PS-3M
G N-Channel MOSFET
Ordering and Marking Information
S
P
HY3208
YYÿ XXXJWW G
PS
HY3208
YYÿ XXXJWW G
M
HY3208
YYÿ XXXJWW G
PM
HY3208
YYÿ XXXJWW G
B
HY3208
YYÿ XXXJWW G
Package Code
P : TO-220FB-3L
B: TO-263-2L
PM: TO-3PS-3M
M : TO-220FB-3M
PS: TO-3PS-3L
Date Code
YYXXX WW
Assembly Material
G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1 www.hooyi.cc
150505
1 Page HY3208P/M/B/PS/PM
Electrical Characteristics (Cont.)
(T
C
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Test Conditions
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
Tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=25V,
Frequency=1.0MHz
VDD=40V, RG= 6 Ω,
IDS =60A, VGS=10V,
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=64V, VGS=10V,
IDS=60A
Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%.
.
HY3208
Min. Typ. Max.
- 1.0 -
- 2900 -
- 443 -
- 177 -
- 23
-
- 35
-
- 77 -
- 44 -
- 70 -
- 14 -
- 21 -
Unit
Ω
pF
ns
nC
3 www.hooyi.cc
3Pages HY3208P/M/B/PS/PM
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
2.4
V = 10V
2.2 GS
I = 60A
DS
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
R @T =25oC:
ON j
7.0mΩ
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
Source-Drain Diode Forward
160
100
T =175oC
10 j
T =25oC
j
1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-Drain Voltage (V)
Capacitance
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
Frequency=1MHz
Ciss
Coss
Crss
0 5 10 15 20 25 30 35 40
VDS - Drain - Source Voltage (V)
Gate Charge
10
V = 64V
9
DS
I = 60A
DS
8
7
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80
QG - Gate Charge (nC)
6 www.hooyi.cc
6 Page | |||
ページ | 合計 : 14 ページ | ||
|
PDF ダウンロード | [ HY3208M データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
HY3208B | N-Channel Enhancement Mode MOSFET | HOOYI |
HY3208M | N-Channel Enhancement Mode MOSFET | HOOYI |
HY3208P | N-Channel Enhancement Mode MOSFET | HOOYI |
HY3208PM | N-Channel Enhancement Mode MOSFET | HOOYI |