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HY3208M の電気的特性と機能

HY3208MのメーカーはHOOYIです、この部品の機能は「N-Channel Enhancement Mode MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 HY3208M
部品説明 N-Channel Enhancement Mode MOSFET
メーカ HOOYI
ロゴ HOOYI ロゴ 




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HY3208M Datasheet, HY3208M PDF,ピン配置, 機能
HY3208P/M/B/PS/PM
N-Channel Enhancement Mode MOSFET
Features
80V/120A
R=
DS(ON)
7.0
m
(typ.)
@
V =10V
GS
100% avalanche tested
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DS
G
TO-220FB-3L
DS
G
TO-220FB-3M
DS
G
TO-263-2L
Applications
Power Management for Inverter Systems.
DS
G
TO-3PS-3L
D
DS
G
TO-3PS-3M
G N-Channel MOSFET
Ordering and Marking Information
S
P
HY3208
YYÿ XXXJWW G
PS
HY3208
YYÿ XXXJWW G
M
HY3208
YYÿ XXXJWW G
PM
HY3208
YYÿ XXXJWW G
B
HY3208
YYÿ XXXJWW G
Package Code
P : TO-220FB-3L
B: TO-263-2L
PM: TO-3PS-3M
M : TO-220FB-3M
PS: TO-3PS-3L
Date Code
YYXXX WW
Assembly Material
G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1 www.hooyi.cc
150505

1 Page





HY3208M pdf, ピン配列
HY3208P/M/B/PS/PM
Electrical Characteristics (Cont.)
(T
C
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Test Conditions
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
Tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=25V,
Frequency=1.0MHz
VDD=40V, RG= 6 ,
IDS =60A, VGS=10V,
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=64V, VGS=10V,
IDS=60A
Note * : Pulse test ; pulse width 300µs, duty cycle2%.
.
HY3208
Min. Typ. Max.
- 1.0 -
- 2900 -
- 443 -
- 177 -
- 23
-
- 35
-
- 77 -
- 44 -
- 70 -
- 14 -
- 21 -
Unit
pF
ns
nC
3 www.hooyi.cc


3Pages


HY3208M 電子部品, 半導体
HY3208P/M/B/PS/PM
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
2.4
V = 10V
2.2 GS
I = 60A
DS
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
R @T =25oC:
ON j
7.0m
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
Source-Drain Diode Forward
160
100
T =175oC
10 j
T =25oC
j
1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-Drain Voltage (V)
Capacitance
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
Frequency=1MHz
Ciss
Coss
Crss
0 5 10 15 20 25 30 35 40
VDS - Drain - Source Voltage (V)
Gate Charge
10
V = 64V
9
DS
I = 60A
DS
8
7
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80
QG - Gate Charge (nC)
6 www.hooyi.cc

6 Page



ページ 合計 : 14 ページ
 
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[ HY3208M データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
HY3208B

N-Channel Enhancement Mode MOSFET

HOOYI
HOOYI
HY3208M

N-Channel Enhancement Mode MOSFET

HOOYI
HOOYI
HY3208P

N-Channel Enhancement Mode MOSFET

HOOYI
HOOYI
HY3208PM

N-Channel Enhancement Mode MOSFET

HOOYI
HOOYI


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