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Datasheet 1N627 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N627 | Diode (spec sheet) |  American Microsemiconductor | diode |
| 2 | 1N6270 | TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR 1.5KE6.8 THRU 1.5KE440CA
TRANSZORB™ TRANSIENT VOLTAGE SUPPRESSOR
Breakdown Voltage - 6.8 to 440 Volts
Case Style 1.5KE
Peak Pulse Power - 1500 Watts
FEATURES
1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA.
0.375 (9.5) 0.285 (7.2)
1.0 (25.4) MIN.
♦ Plastic package has Underwriters Laboratory Fl |  General Semiconductor | tvs-diode |
| 3 | 1N6270 | Zener Diode, Rectifier |  Microsemi Corporation | tvs-diode |
| 4 | 1N6270 | TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR DC COMPONENTS CO., LTD.
R
1.5KE6.8 THRU 1.5KE440CA
RECTIFIER SPECIALISTS
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE RANGE - 6.8 to 440 Volts PEAK PULSE POWER - 1500 Watts
FEATURES
* Glass passivated junction * 1500 Watts Peak Pulse Power capability on 10/1000 µs waveform * |  Dc Components | tvs-diode |
| 5 | 1N6270 | Diode TVS (Transient Voltage Suppressor) 1N6267 - 1N6303A
VBR : 6.8 - 200 Volts PPK : 1500 Watts
FEATURES :
* 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V
TRANSIENT VOLTAGE SUPPRESSOR
DO-2 |  EIC discrete Semiconductors | tvs-diode |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
| 5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
| 6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
| 7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f  Formosa MS diode | |
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