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7N60AF の電気的特性と機能

7N60AFのメーカーはnELLです、この部品の機能は「N-Channel Power MOSFET / Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 7N60AF
部品説明 N-Channel Power MOSFET / Transistor
メーカ nELL
ロゴ nELL ロゴ 




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7N60AF Datasheet, 7N60AF PDF,ピン配置, 機能
SEMICONDUCTOR
7N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(7A, 600Volts)
DESCRIPTION
The Nell 7N60 is a three-terminal silicon
device with current conduction capability of 7A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 600V ,and max.
threshold voltage of 4 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits,
and general purpose switching applications .
FEATURES
RDS(ON) = 1.2Ω @ VGS = 10V
Ultra low gate charge(38nC max.)
Low reverse transfer capacitance
(CRSS = 16pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
PRODUCT SUMMARY
ID (A)
7
VDSS (V)
600
RDS(ON) (Ω)
1.2 @ VGS = 10V
QG(nC) max.
38
D
GDS
TO-220AB
(7N60A)
D
G
S
TO-263(D2PAK)
(7N60H)
GDS
TO-220F
(7N60AF)
D (Drain)
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
VDGR
Drain to Source voltage
Drain to Gate voltage
TJ=25°C to 150°C
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
IAR=7A, RGS=50Ω, VGS=10V
EAS Single pulse avalanche energy(Note 2)
IAS=7A, L=19.5mH
dv/dt
Peak diode recovery dv/dt(Note 3)
PD Total power dissipation
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS = 7A, VDD = 50V, L = 19.5mH, RGS = 25Ω, starting TJ=25°C.
3.ISD ≤ 7A, di/dt ≤ 200A/µs, VDD V(BR)DSS, starting TJ=25°C.
TO-220AB/TO-263
TC=25°C
TO-220F
1.6mm from case
www.nellsemi.com
Page 1 of 8
VALUE
600
600
±30
7
4.3
28
7
14
500
4.5
140
48
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
V /ns
W
ºC
lbf.in (N.m)

1 Page





7N60AF pdf, ピン配列
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
Current rating, ID
7 = 7A
MOSFET series
N = N-Channel
Voltage rating, VDS
60 = 600V
Package type
A = TO-220AB
AF = TO-220F
H = TO-263(D²PAK)
7N60 Series RRooHHSS
Nell High Power Products
7 N 60 A
Fig.1 On-State characteristics
103
100
VGS
Top: 12V
10V
8V
7V
6.5V
6V
5.5V
Bottorm: 5 V
10-1
101
*Notes:
1.250µs Pulse test
2.Tc=25°C
102 103
Drain-to-Source voltage, VDS(V)
Fig.2 Transfer characteristics
101
150°C
100
25°C
10-1
2
4
-55°C
6
*Notes:
1.VDS=50V
2.250µs Pulse test
8 10
Gate-Source voltage, VGS (V)
Fig.3 On-resistance variation vs. drain
current and gate voltage
3.5
3
VGS=10V
2.5
2
VGS=20V
1.5
1.0
0.5
0
*Note:TJ=25°C
5 10 15 20
Drain current, ID (A)
Fig.4 Body diode forward voltage variation
with source current and temperature
101
100
10-1
0.2
150°C 25°C
*Notes:
1.VGS=0V
2.250μs Pulse test
0.4 0.6 0.8 1.0 1.2 1.4
Source-drain voltage, VSD(V)
www.nellsemi.com
Page 3 of 8


3Pages


7N60AF 電子部品, 半導体
SEMICONDUCTOR
TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
7N60 Series RRooHHSS
Nell High Power Products
Fig.1B Peak diode recovery dv/dt waverforms
D.U.T.
+
-
+
VDS
-
L
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* lSD controlled by pulse period
* D.U.T.-Device under test
VDD
Fig.2A Switching test circuit
VDS
VGS
RG
10V
Pulse Width ≤ 1µs
Duty Factor ≤ 0.1%
RL
D.U.T.
VDD
VGS
(Driver)
lSD
(D.U.T.)
VDS
(D.U.T.)
P.W.
Period
D= P.W.
Period
VGS=10V
lFM, Body Diode forward current
di/dt
lRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Fig.2B Switching Waveforms
VDS
90%
10%
VGS
td(ON)
tR
td(OFF)
tF
Fig.3A Gate charge test circuit
Fig.3B Gate charge waveform
Same Type as
12V 50kΩ D.U.T.
0.2µF
0.3µF
VDS
VGS
3mA
D.U.T.
VGS
10V
QGS
www.nellsemi.com
Page 6 of 8
QG
QGD
Charge

6 Page



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共有リンク

Link :


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