|
|
Datasheet MSN04C0K Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MSN04C0K | N-Channel Enhancement Mode Power MOS FET MSN04C0K
40V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 40V,ID =200A RDS(ON) < 4mΩ @ VGS=10V
(Typ:3.3mΩ)
● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current |  MORESEMI | data |
MSN Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MSN014WE | N-Channel Enhancement Mode Power MOS FET MSN014WE
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5V RDS(ON) <9 mΩ @ VGS=2.5V ESD Rating: 2000V HBM
● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected
A MORESEMI data | | |
| 2 | MSN0205 | N-Channel Enhancement Mode Power MOS FET MSN0205
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID = 5A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.5V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Lead Free
Application
● Battery pro MORESEMI data | | |
| 3 | MSN0207E | N-Channel Enhancement Mode Power MOS FET MSN0207E
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID =6.5A RDS(ON) <40mΩ @ VGS=1.8V RDS(ON) <33mΩ @ VGS=2.5V RDS(ON) <27mΩ @ VGS=4.5V ESD Rating: 2000V HBM
● High Power and current handing capability ● Lead free product is acquired ● Surface moun MORESEMI data | | |
| 4 | MSN0212W | N-Channel Enhancement Mode Power MOS FET MSN0212W
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
●VDS =20V,ID =12A RDS(ON) < 8mΩ @ VGS=10V RDS(ON) < 11mΩ @ VGS=10V
● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current
Application
● DC/DC Converter ● Notebook V MORESEMI data | | |
| 5 | MSN0260D | N-Channel Enhancement Mode Power MOS FET MSN0260D
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =20V,ID =60A RDS(ON) <6mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package fo MORESEMI data | | |
| 6 | MSN0304 | N-Channel Enhancement Mode Power MOS FET MSN0304
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) <58mΩ @ VGS=10V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Application
● Battery protection ● MORESEMI data | | |
| 7 | MSN0306 | N-Channel Enhancement Mode Power MOS FET MSN0306
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Lead Free MORESEMI data | |
| Esta página es del resultado de búsqueda del MSN04C0K. Si pulsa el resultado de búsqueda de MSN04C0K se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |