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STK534U342C-E の電気的特性と機能

STK534U342C-EのメーカーはON Semiconductorです、この部品の機能は「Intelligent Power Module」です。


製品の詳細 ( Datasheet PDF )

部品番号 STK534U342C-E
部品説明 Intelligent Power Module
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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STK534U342C-E Datasheet, STK534U342C-E PDF,ピン配置, 機能
STK534U342C-E
Intelligent Power Module (IPM)
600 V, 5 A
Overview
This “Inverter IPM” is highly integrated device containing all High Voltage
(HV) control from HV-DC to 3-phase outputs in a single SIP module (Single-In
line Package). Output stage uses IGBT/FRD technology and implements Under
Voltage Protection (UVP). Internal Boost diodes are provided for high side gate
boost drive.
www.onsemi.com
Function
Single control power supply due to Internal bootstrap circuit for high side
pre-driver circuit
All control input and status output are at low voltage levels directly compatible
with microcontrollers.
Built-in cross conduction prevention.
Externally accessible embedded thermistor for substrate temperature
measurement
Certification
UL1557 (File number: E339285)
Specifications
Absolute Maximum Ratings at Tc = 25C
Parameter
Symbol
Remarks
Ratings
Supply voltage
Collector-emitter voltage
VCC
VCE
P to U-, V-, W-, surge < 500 V
*1
P to U, V, W or U, V, W, to U-, V-, W-
450
600
Output current
P,U-,V-,W-,U,V,W terminal current
Io
P,U-,V-,W-,U,V,W terminal current, Tc = 100C
±5
±3
Output peak current
Iop P,U-,V-,W-,U,V,W terminal current, P.W. = 1 ms
±10
Pre-driver voltage
Input signal voltage
FLTEN terminal voltage
VD1,2,3,4
VIN
VFLTEN
VB1 to U, VB2 to V, VB3 to W, VDD to VSS
HIN1, 2, 3, LIN1, 2, 3
FLTEN terminal
*2
20
0.3 to VDD
0.3 to VDD
Maximum power dissipation
Pd
IGBT per 1 channel
27.7
Junction temperature
Tj
IGBT, FRD, Pre-Driver IC
150
Storage temperature
Tstg
40 to +125
Operating case temperature
Tc
IPM case
20 to +100
Tightening torque
A screw part
*3
0.9
Withstand voltage
Vis 50 Hz sine wave AC 1 minute *4
2000
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1: Surge voltage developed by the switching operation due to the wiring inductance between P and U-(V-, W-) terminal.
*2: Terminal voltage: VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = VDD to VSS.
*3: Flatness of the heat-sink should be 0.15 mm and below.
*4: Test conditions : AC 2500 V, 1 s.
Unit
V
V
A
A
A
V
V
V
W
C
C
C
Nm
VRMS
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 15 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
September 2016 - Rev. 1
1
Publication Order Number :
STK534U342C-E/D

1 Page





STK534U342C-E pdf, ピン配列
STK534U342C-E
Electrical Characteristics at Tc = 25C, VD1, VD2, VD3, VD4 = 15 V, VCC = 300 V, L = 3.9 mH
Parameter
Symbol
Conditions
Test
circuit
MIN
TYP MAX
Unit
Switching Character
Switching time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Diode reverse recovery energy
Diode reverse recovery time
Reverse bias safe operating area
Short circuit safe operating area
Allowable offset voltage slew rate
t ON
t OFF
Eon
Eoff
Etot
Eon
Eoff
Etot
Erec
Trr
RBSOA
SCSOA
dv/dt
Io = 5 A
Io = 3 A
Io = 3 A, Tc = 100C
IF = 3 A, P = 400 V, L = 0.5 mH,
Tc = 100C
Io = 10 A, VCE = 450 V
VCE = 400 V, Tc = 100C
Between U,V,W to
U-,V-,W-
Reference voltage is “VSS” terminal voltage unless otherwise specified.
Fig.5
Fig.5
Fig.5
-
-
-
-
-
0.3 0.5 1.2
- 1.5 2.0
- 170 -
- 60 -
- 230 -
- 190 -
- 80 -
- 270 -
- 14 -
- 57 -
Full square-
4- -
50 -
50
μs
μJ
μJ
μJ
μJ
μJ
μJ
μJ
ns
μs
V/ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Notes
1. When the internal protection circuit operates, a Fault signal is turned ON (When the Fault terminal is low level, Fault signal
is ON state : output form is open DRAIN) but the Fault signal does not latch.After protection operation ends,it returns
automatically within about typ. 2ms and resumes operation beginning condition. So, after Fault signal detection, set all
input signals to OFF (Low) at once. However, the operation of pre-drive power supply low voltage protection (UVLO:with
hysteresis about 0.2 V) is as follows.
Upper side:
The gate is turned off and will return to regular operation when recovering to the normal voltage, but the latch will continue
till the input signal will turn ‘low’.
Lower side:
The gate is turned off and will automatically reset when recovering to normal voltage. It does not depend on input signal
voltage.
2. When assembling the IPM on the heat sink with M3 type screw, tightening torque range is 0.6 Nm to 0.9 Nm.
3. When use the over-current protection with external resistor, please set resistance value so that current protection value
becomes equal to or less than the double (2 times) of the rating output electric current (Io).
www.onsemi.com
3


3Pages


STK534U342C-E 電子部品, 半導体
STK534U342C-E
Switching time (The circuit is a representative example of the lower side U phase.)
Input signal
(0 to 5V)
90%
Io
tON
10%
tOFF
Fig.5
www.onsemi.com
6

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部品番号部品説明メーカ
STK534U342C-E

Intelligent Power Module

ON Semiconductor
ON Semiconductor


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