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PDF MTE300P10KN3 Data sheet ( Hoja de datos )

Número de pieza MTE300P10KN3
Descripción P-Channel Enhancement Mode Power MOSFET
Fabricantes CYStech Electronics 
Logotipo CYStech Electronics Logotipo



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No Preview Available ! MTE300P10KN3 Hoja de datos, Descripción, Manual

CYStech Electronics Corp.
Spec. No. : C135N3
Issued Date : 2015.09.07
Revised Date :
Page No. : 1/9
-100V P-Channel Enhancement Mode MOSFET
MTE300P10KN3
Features
Low gate charge
Compact and low profile SOT-23 package
Advanced trench process technology
High density cell design for ultra low on resistance
ESD Protected Gate
Pb-free lead plating package
BVDSS
ID @ VGS=-10V, TA=25°C
RDSON@VGS=-10V, ID=-1A
-100V
-1.2A
378mΩ(typ)
Symbol
MTE300P10KN3
Outline
SOT-23
D
GGate
SSource
DDrain
GS
Ordering Information
Device
MTE300P10KN3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTE300P10KN3
CYStek Product Specification

1 page




MTE300P10KN3 pdf
CYStech Electronics Corp.
Spec. No. : C135N3
Issued Date : 2015.09.07
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
f=1MHz
Ciss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=-1mA
1.0
100 0.8
C oss
0.6
10
0
Crss
10 20
-VDS, Drain-Source Voltage(V)
0.4 ID=-250μA
0.2
30 -75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
10
RDS(ON)
Limited
100μs
1
1ms
10ms
0.1
TC=25°C, Tj=150°C,
VGS=-10V, RθJC=4°C/W,
single pulse
0.01
100ms
1s
DC
0.1 1
10 100
-VDS, Drain-Source Voltage(V)
1000
10
8
6
4
2
0
0
Gate Charge Characteristics
VDS=-80V
ID=-1A
2 46 8
Qg, Total Gate Charge(nC)
10
Maximum Drain Current vs Junction Temperature
1.4
1.2
1
0.8
0.6
0.4
VGS=-10V, Tj(max)=150°C,
0.2 RθJA=90°C/W, single pulse
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
10
9
8
7
6
5
4
3
2
1
0
0
Typical Transfer Characteristics
VDS=-10V
12 34 56 78
-VGS, Gate-Source Voltage(V)
9 10
MTE300P10KN3
CYStek Product Specification

5 Page










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