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74AUP1G58 の電気的特性と機能

74AUP1G58のメーカーはNXP Semiconductorsです、この部品の機能は「Low-power configurable multiple function gate」です。


製品の詳細 ( Datasheet PDF )

部品番号 74AUP1G58
部品説明 Low-power configurable multiple function gate
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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74AUP1G58 Datasheet, 74AUP1G58 PDF,ピン配置, 機能
74AUP1G58
Low-power configurable multiple function gate
Rev. 7 — 17 September 2015
Product data sheet
1. General description
The 74AUP1G58 provides configurable multiple functions. The output state is determined
by eight patterns of 3-bit input. The user can choose the logic functions AND, OR, NAND,
NOR, XOR, inverter and buffer. All inputs can be connected to VCC or GND.
This device ensures a very low static and dynamic power consumption across the entire
VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF.
The IOFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The 74AUP1G58 has Schmitt trigger inputs making it capable of transforming slowly
changing input signals into sharply defined, jitter-free output signals.
The inputs switch at different points for positive and negative-going signals. The difference
between the positive voltage VT+ and the negative voltage VTis defined as the input
hysteresis voltage VH.
2. Features and benefits
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
ESD protection:
HBM JESD22-A114F exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V
Low static power consumption; ICC = 0.9 A (maximum)
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial power-down mode operation
Multiple package options
Specified from 40 C to +85 C and 40 C to +125 C

1 Page





74AUP1G58 pdf, ピン配列
NXP Semiconductors
6. Pinning information
6.1 Pinning
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Fig 2. Pin configuration SOT363
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Fig 4. Pin configuration SOT891, SOT1115 and
SOT1202
6.2 Pin description
Table 3.
Symbol
B
GND
A
Y
VCC
C
Pin description
Pin
1
2
3
4
5
6
74AUP1G58
Low-power configurable multiple function gate
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Fig 3. Pin configuration SOT886
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Fig 5. Pin configuration SOT1255 (X2SON6)
Description
data input
ground (0 V)
data input
data output
supply voltage
data input
74AUP1G58
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 17 September 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
3 of 24


3Pages


74AUP1G58 電子部品, 半導体
NXP Semiconductors
74AUP1G58
Low-power configurable multiple function gate
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min Max Unit
IGND
Tstg
Ptot
ground current
storage temperature
total power dissipation
Tamb = 40 C to +125 C
50
65
[2] -
-
+150
250
mA
C
mW
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For SC-88 packages: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K.
For X2SON6 and XSON6 packages: above 118 C the value of Ptot derates linearly with 7.8 mW/K.
9. Recommended operating conditions
Table 7.
Symbol
VCC
VI
VO
Tamb
Recommended operating conditions
Parameter
Conditions
supply voltage
input voltage
output voltage
Active mode
ambient temperature
Power-down mode; VCC = 0 V
10. Static characteristics
Min Max Unit
0.8 3.6 V
0 3.6 V
0 VCC V
0 3.6 V
40 +125 C
Table 8. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Tamb = 25 C
VOH HIGH-level output voltage
VOL LOW-level output voltage
VI = VT+ or VT
IO = 20 A; VCC = 0.8 V to 3.6 V
IO = 1.1 mA; VCC = 1.1 V
IO = 1.7 mA; VCC = 1.4 V
IO = 1.9 mA; VCC = 1.65 V
IO = 2.3 mA; VCC = 2.3 V
IO = 3.1 mA; VCC = 2.3 V
IO = 2.7 mA; VCC = 3.0 V
IO = 4.0 mA; VCC = 3.0 V
VI = VT+ or VT
IO = 20 A; VCC = 0.8 V to 3.6 V
IO = 1.1 mA; VCC = 1.1 V
IO = 1.7 mA; VCC = 1.4 V
IO = 1.9 mA; VCC = 1.65 V
IO = 2.3 mA; VCC = 2.3 V
IO = 3.1 mA; VCC = 2.3 V
IO = 2.7 mA; VCC = 3.0 V
IO = 4.0 mA; VCC = 3.0 V
VCC 0.1
0.75 VCC
1.11
1.32
2.05
1.9
2.72
2.6
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max Unit
-V
-V
-V
-V
-V
-V
-V
-V
0.1 V
0.3 VCC V
0.31 V
0.31 V
0.31 V
0.44 V
0.31 V
0.44 V
74AUP1G58
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 17 September 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
6 of 24

6 Page



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共有リンク

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