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TIP147のメーカーはMulticompです、この部品の機能は「Darlington Transistors」です。 |
部品番号 | TIP147 |
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部品説明 | Darlington Transistors | ||
メーカ | Multicomp | ||
ロゴ | |||
このページの下部にプレビューとTIP147ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
Darlington Transistors
Features:
Designed for general-purpose amplifier and low speed switching applications
• Collector-Emitter sustaining voltage
VCEO (sus) = 60 V (Minimum)
= 80 V (Minimum)
- TIP145
- TIP141, TIP146
= 100 V (Minimum) - TIP142, TIP147
• Collector-Emitter saturation voltage
VCE (sat) = 2 V (Maximum) at IC = 5 A
• Monolithic construction with Built-in Base-Emitter shunt resistor
Pin 1. Base
2. Collector
3. Emitter
Dimensions
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Minimum
20.63
15.38
1.9
5.1
14.81
11.72
4.2
1.82
2.92
0.89
5.26
18.5
4.68
2.4
3.25
0.55
Maximum
22.38
16.2
2.7
6.1
15.22
12.84
4.5
2.46
3.23
1.53
5.66
21.5
5.36
2.8
3.65
0.7
Dimensions : Millimetres
NPN
TIP141
TIP142
PNP
TIP145
TIP146
TIP147
10 Amperes
Darlington
Complementary
Silicon
Power Transistors
60 - 100 V
125 W
TO-247 (3P)
www.element14.com
www.farnell.com
www.newark.com
Page <1>
18/05/12 V1.1
1 Page Darlington Transistors
Electrical Characteristics (TC = 25°C unless otherwise specified)
ON Characteristics (1)
DC Current Gain
(IC = 5 A, VCE = 4 V)
(IC = 10 A, VCE = 4 V)
Collector - Emitter Saturation Voltage
(IC = 5 A, IB = 10 mA)
(IC = 10 A, IB = 40 mA)
Base - Emitter Saturation Voltage
(IC = 10 A, IB = 40 mA)
Base - Emitter On Voltage
(IC = 10 A, VCE = 4 V)
hFE
VCE (sat)
VBE (sat)
VBE (on)
1,000
500
-
-
-
-
2
3
3.5
3
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
VCC = 30 V, IC = 5 A
IB1 = -IB2 = 20 mA
tp = 20 µs,
Duty cycle ≤2%
1. Pulse Test : Pulse width = 30 µs, Duty cycle = 2%
Internal Schematic Diagram
NPN : TIP141, TIP142
td
tr
ts
tf
0.15 (Typical)
0.55 (Typical)
2.5 (Typical)
-
-
-
-
PNP : TIP145, TIP146, TIP147
-
V
µs
Active Region Safe Operating Area (SOA)
VCE, Collector - Emitter Voltage (V)
www.element14.com
www.farnell.com
www.newark.com
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown
safe operating area curves indicate IC - VCE limits of the transistor
that must be observed for reliable operation i.e., the transistor must
not be subjected to greater dissipation than curves indicate.
The data of SOA curve is base on TJ (PK) = 150°C; TC is variable
depending on conditions. At high case temperatures, thermal
limitation will reduce the power that can be handled to values less
than the limitations imposed by second breakdown
Page <3>
18/05/12 V1.1
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ TIP147 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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