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PDF TIP110 Data sheet ( Hoja de datos )
| Número de pieza | TIP110 | |
| Descripción | NPN Transistor | |
| Fabricantes | yecheng technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TIP110 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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Shenzhen yecheng technology industry co.,ltd
TIP110
DARLINGTON TRANSISTOR (NPN)
FEATURES
z High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.)
z Low Collector-Emitter Saturation Voltage
z Industrial Use
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage
60 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current -Continuous
2A
PC Collector Power Dissipation
2W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55 to +150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
Parameter
Collector-base breakdown voltage
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=10mA,IE=0
VCEO(sus) IC=30mA,IB=0
V(BR)EBO IE=10mA,IC=0
ICEO
VCE=30V,IB=0
ICBO
VCB=60V,IE=0
IEBO
VEB=5V,IC=0
hFE(1) VCE=4V,IC=1A
hFE(2) VCE=4V,IC=2A
VCE(sat) IC=2A,IB=8mA
VBE VCE=4V,IC=2A
Cob VCB=10V,IE=0,f=0.1MHz
Min Typ Max Unit
60 V
60 V
5V
2 mA
1 mA
2 mA
1000
500
2.5 V
2.8 V
100 pF
1
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet TIP110.PDF ] | |
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