(PDF) 1165899 Datasheet - High power NPN silicon transistors

Número de pieza	1165899
Descripción	High power NPN silicon transistors
Fabricantes	Multicomp
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No Preview Available ! 1165899 TO-3 High power NPN silicon transistors. Features: • High voltage capability. • High current capability. • Fast switching speed. Applications: Switch mode power supplies. Flyback and forward single transistor low power converters. Description: The BUX48/A silicon multiepitaxial mesa NPN transistors mounted respectively in TO-3 fully isolated package. They are particulary intended for switching and industrial applications from single and three-phase mains. Internal Schematic Diagram For TO-3 Package Absolute Maximum Ratings Parameter Collector-Emitter Voltage (RBE = 10Ω) Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Collector Peak Current Non Repetitive (tp <20µs) Base Current Base Peak Current Total Dissipation at TC = 25°C Storage Temperature Maximum Operating Junction Temperature http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Symbol VCER VCES VCEO VEBO IC ICM ICP IB IBM Ptot Tstg Tj Page <1> Value 850 400 7 15 30 55 4 20 175 -65 to 200 200 Unit V A W °C 22/10/08 V1.1 1 page

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